MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0100TRPBF


Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
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Infineon 61110
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AUD 0.1595
Multiples of: 3000

   N - Channel     Smd/SmtSOT - 23Reel       
IPL65R1K0C6SATMA1


Infineon Technologies MOSFET N-Ch 650V 4.2A ThinPAK 5x6
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Infineon 7977
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AUD 1.0804
Multiples of: 1

4.2 A650 V1 Ohmsn - channel30 V3 V- 40 C+ 150 C34.7 Wsmd/smtTH in PAK 5X6Reelsi1 channel30 V15 nC  coolmos
RSJ250P10FRATL


MOSFET Pch -100V Vds -25A 0.05Rds(on) 60Qg
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ROHM 7969
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AUD 1.2478
Multiples of: 1

25 A100 V45 mOhmsP - Channel 1 V + 150 C50 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel10 V60 nCEnhancementAec - Q101 
MS9435


30V 5.3A 50mΩ@10V,5.3A 2.5W 3V@250uA 77pF@15V P Channel 690pF@15V 14nC@15V +150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 7968
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AUD 0.0467
Multiples of: 10

                   
BSS205NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 7963
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AUD 0.1278
Multiples of: 1

2.5 A20 V40 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel12 V3.2 nCEnhancementAec - Q101 
FCB199N65S3


MOSFET SuperFET3 650V 199mOhm D2PAK PKG
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ON Semiconductor 7952
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AUD 3.22
Multiples of: 1

14 A650 V170 mOhmsN - Channel 2.5 V- 55 C+ 150 C98 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V30 nCEnhancement  
IQDH88N06LM5CGSCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 7950
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AUD 3.8762
Multiples of: 1

447 A60 V860 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V76 nCEnhancement OptiMOS
SQ7414CENW-T1_JE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 7941
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AUD 0.5168
Multiples of: 1

18 A60 V23 mOhmsN - Channel 2.5 V- 55 C+ 175 C62.5 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
YJL2305B


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
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Yangjie 2405
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AUD 0.0606
Multiples of: 20

            Trench Power Lv      
RV2C002UNT2L


ROHM Semiconductor MOSFET
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ROHM 0
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AUD 0.087
Multiples of: 1

180 mA20 V11.4 OhmsN - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtDFN1006 - 3ReelSi1 Channel+/- 10 V Enhancement  
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