MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS126 H6906


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 8549
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AUD 0.4527
Multiples of: 1

21 mA600 V500 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT23 - 3ReelSi1 Channel10 V1.4 nCDepletion  
IRL3705NSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
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Infineon 8536
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AUD 1.229
Multiples of: 800

89 A55 V18 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel16 V98 nC   
ISC015N06NM5LF2ATMA1


MOSFETs N
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Infineon 8532
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AUD 2.8635
Multiples of: 1

275 A60 V1.55 mOhmsN - Channel 3.45 V- 55 C+ 175 C217 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V90 nCEnhancement  
SSM6J503NU,LF


MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS
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Toshiba 8530
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AUD 0.1695
Multiples of: 1

6 A20 V89.6 mOhmsP - Channel    1 WSmd/SmtUDFN - 6ReelSi1 Channel8 V    
DMN3067LW-13


MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
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Diodes Incorporated 8526
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AUD 0.124
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2.6 A30 V70 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V4.6 nCEnhancement Powerdi
DMN53D0LDW-13


MOSFET N-CHANNEL MOSFET
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Diodes Incorporated 8521
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AUD 0.0683
Multiples of: 10

                   
SE4607


MOSFET N & P Trench 20V 4.2A,2.8A 1.2V @ 250uA 45 mΩ @ 2.8A,4.5V SOIC-8_150mil RoHS
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SINO-IC 8519
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AUD 0.0681
Multiples of: 10

                   
FDD1600N10ALZ


Fairchild Semiconductor MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
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ON Semiconductor 8518
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AUD 0.7108
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6.8 A100 V175 mOhmsN - Channel 2.8 V- 55 C+ 150 C14.9 WSmd/SmtDPAK - 3ReelSi1 Channel 3.61 nC  Powertrench
IRF820PBF


N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 8512
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AUD 0.6036
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2.5 A500 V3 OhmsN - Channel 2 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V24 nCEnhancement  
BSP295 H6327


Infineon Technologies MOSFET N-Ch 60V 1.8A SOT-223-3
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Infineon 7077
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AUD 0.4522
Multiples of: 1

1.8 A60 V300 mOhmsN - Channel 1.1 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V14 nCEnhancement  
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