MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC070N10NS3G


MOSFET N Channel 100V 90A(Tc) 3.5V @ 75uA 7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 9680
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AUD 0.723
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DMT5015LFDF-7


MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
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Diodes Incorporated 8081
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AUD 0.313
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9.1 A50 V15 mOhmsN - Channel16 V2 V- 55 C+ 150 C1.9 WSmd/SmtU - DFN2020 - 6ReelSi1 Channel16 V6.1 nCEnhancement Dmt5015
PSMN1R0-30YLC,115


NXP Semiconductors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
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Nexperia 8071
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AUD 1.2954
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100 A30 V1.15 mOhmsN - Channel20 V1.41 V- 55 C+ 175 C137 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V103.5 nCEnhancement  
SI2301A-TP


MOSFET P Trench 20V 2.8A 900mV @ 250uA 120 mΩ @ 2.8A,4.5V SOT-23 RoHS
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Micro Commercial Components (MCC) 8067
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AUD 0.1757
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IRLR2908TRPBF


Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
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Infineon 8061
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AUD 0.7799
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39 A80 V30 mOhmsN - Channel    120 WSmd/SmtDPAKReelSi1 Channel16 V22 nC   
PMCB60XNEZ


MOSFET PMCB60XNE/SOT8026/DSN1006-3
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Nexperia 8057
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AUD 0.2118
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4.3 A30 V55 mOhmsN - Channel 1.1 V- 55 C+ 150 C1 WSMD/SMTDSN10063 - 3Reel , Cut TapeSi1 Channel12 V5 nCEnhancement  
SQ4937EY-T1_GE3


MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
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Vishay 8057
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AUD 0.8331
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5 A30 V56 mOhms , 56 mOhmsP - Channel 2.5 V- 55 C+ 175 C3.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V15 nC , 15 nCEnhancementAec - Q101Trenchfet
BSS138BKW


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 8055
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AUD 0.0191
Multiples of: 5

                   
PMDPB95XNE2X


MOSFET PMDPB95XNE2/HUSON6/REEL 7" Q1/
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Nexperia 7992
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AUD 0.2167
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           Cut TapeSi      
IRFR4620TRLPBF


International Rectifier MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Infineon 928
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AUD 1.2612
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24 A200 V78 mOhmsN - Channel20 V - 55 C+ 175 C144 WSmd/SmtDPAK - 3ReelSi1 Channel20 V25 nCEnhancement  
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