MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2045U-7


MOSFET MOSFET BVDSS: 8V 24V
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Diodes Incorporated 138245
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AUD 0.0985
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3.9 A20 V42.5 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3 Si1 Channel8 V Enhancement  
IRF7469TRPBF


MOSFET N Trench 40V 9A 3V @ 250uA 17 mΩ @ 9A,10V SO-8 RoHS
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Infineon 7807
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AUD 0.6124
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9 A40 V21 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V15 nC   
HL2300


20V 4.5A 25m@4.5V,4.5A 1W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 7803
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AUD 0.0299
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BRCS9435SC


MOSFET P Trench 30V 5.3A 3V @ 250uA 50 mΩ @ 5.3A,10V SOP-8 RoHS
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Blue Rocket 7793
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AUD 0.0692
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BS170_D27Z


Fairchild Semiconductor MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 7789
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AUD 0.1215
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500 mA60 V1.2 OhmsN - Channel20 V - 55 C+ 150 C830 mWThrough HoleTO - 92 - 3Reel    Enhancement  
DMNH4026SSD-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 7789
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AUD 0.4906
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           Cut Tape       
BSC0925ND


MOSFET N-Ch 30V 40A TISON-8
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Infineon 7779
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AUD 0.7423
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40 A30 V4.2 mOhms , 4.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C30 WSmd/SmtTISON - 8Cut TapeSi2 Channel20 V17 nC , 17 nCEnhancement Optimos
WNM2030-3/TR


MOSFET N Trench 20V 880mA 1V @ 250uA 310 mΩ @ 550mA,4.5V SOT-723 RoHS
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Will Semiconductor 7777
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AUD 0.0538
Multiples of: 20

                   
IRFR1205TRLPBF


MOSFET MOSFT 55V 37A 27mOhm 43.3nC
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Infineon 7761
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AUD 0.7996
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37 A55 V27 mOhmsN - Channel 4 V- 55 C+ 175 C107 WSmd/SmtDPAKReelSi1 Channel20 V65 nC   
BSC034N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8
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Infineon 1636
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AUD 0.5287
Multiples of: 1

            Optimos 3      
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