MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTNS3193NZT5G


MOSFET NFET XLLGA3 20V 230MA
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ON Semiconductor 7760
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AUD 0.1425
Multiples of: 1

224 mA20 V1.4 OhmsN - Channel+/- 8 V1 V- 55 C+ 150 C120 mWSmd/SmtXLLGA - 3ReelSi1 Channel8 V0.7 nCEnhancement  
TPM2020UX


20V 13A SOP-8 MOSFETs ROHS
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Shenzhen JingYang 7760
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AUD 0.1461
Multiples of: 5

                   
OSP50N06T


60V 50A 13.5m 100W TO-220AB MOSFETs ROHS
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OSEN 7760
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AUD 0.177
Multiples of: 5

                   
ES6U2T2R


MOSFET 1.5V Drive Nch+SBD MOSFET
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ROHM 7760
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AUD 0.2127
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1.5 A20 V130 mOhmsN - Channel, Sbd 300 mV- 55 C+ 150 C800 mWSmd/SmtSOT - 563T - 6Tape And ReelSi1 Channel10 V1.8 nCEnhancement  
MCQ011N06YL-TP


MOSFETs N-CHANNEL MOSFET,SOP-8
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Micro Commercial Components (MCC) 7760
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AUD 0.2776
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10 A60 V11 mOhmsN - Channel 3 V- 55 C+ 150 C2.5 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
BSP316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
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Infineon 7760
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AUD 0.2888
Multiples of: 1000

            Sipmos      
ZVN0545GTA


N-Channel 450 V 140mA (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 7760
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AUD 0.3446
Multiples of: 1000

140 mA450 V50 OhmsN - channel  - 55 C+ 150 C2 WSmd/smtSOT - 223ReelSi1 Channel20 V Enhancement  
BSP171PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
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Infineon 7760
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AUD 0.3502
Multiples of: 1000

            Sipmos      
RV8C010UNHZGG2CR


N-Channel 20V 1A (Ta) 1W Surface Mount DFN1010-3W
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ROHM 7517
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AUD 0.2709
Multiples of: 1

1 A20 V470 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSMD/SMTDFN - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V-Enhancement  
STN3NF06


MOSFET N-Ch 30 Volt 3 Amp
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STMicroelectronics 1041
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AUD 0.5391
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
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