MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SH8JC5TB1


MOSFET PCH+PCH-60V DUAL
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ROHM 8927
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AUD 1.5958
Multiples of: 1

7.5 A60 V32 mOhmsP - Channel 1 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 10 V , + 10 V50 nCEnhancement  
Hot IRFR5305TRPBF


MOSFET P Trench 55V 31A 4V @ 250uA 65 mΩ @ 16A,10V TO-252-2 (DPAK) RoHS
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Infineon 8924
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AUD 0.3488
Multiples of: 5

31 A55 V65 mOhmsP - Channel 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V42 nCEnhancement  
PSMN2R0-30YLE,115


N-Channel 30 V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 8924
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AUD 1.1607
Multiples of: 1

100 A30 V1.7 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C272 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V87 nCEnhancement  
BUK7219-55A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 8924
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AUD 2.2991
Multiples of: 1

55 A55 V19 mOhmsN - Channel20 V - 55 C+ 175 C114 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
BSS806NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 8912
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AUD 0.0978
Multiples of: 1

2.3 A20 V41 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel8 V1.7 nCEnhancementAec - Q101 
PJQ1906_R1_00201


MOSFETs 20V N-Channel Enhancement Mode MOSFET
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Panjit 8904
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AUD 0.0849
Multiples of: 1

300 mA30 V1.2 OhmsN - Channel 1 V- 55 C+ 150 C700 mWSMD/SMTDFN - 1006 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V900 pCEnhancement  
IPA057N08N3 G


MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
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Infineon 8902
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AUD 1.8754
Multiples of: 1

60 A80 V5.7 mOhmsN - Channel  - 55 C+ 175 C39 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V18 nCEnhancement Optimos
ISC011N06LM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 8900
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AUD 2.7746
Multiples of: 1

288 A60 V1.15 mOhmsN - Channel 2.3 V- 55 C+ 175 C188 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V63 nCEnhancement  
IQE006NE2LM5CGSCATMA1


MOSFET
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Infineon 8889
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AUD 1.4497
Multiples of: 1

47 A25 V580 uOhmsN - Channel 2 V- 55 C+ 150 C2.1 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 16 V , + 16 V82 nCEnhancement  
NVR5124PLT1G


60V 1.1A 230mO@10V,3A 470mW P Channel SOT-23 MOSFETs ROHS
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ON Semiconductor 5820
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AUD 0.2326
Multiples of: 3000

- 1.1 A- 60 V230 mOhmsP - Channel - 1.5 V- 55 C+ 150 C- 0.47 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V2.3 nCEnhancementAec - Q100 
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