MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ECH8667-TL-H


ON Semiconductor MOSFET PCHNCH 4V DRIVE SERIES
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ON Semiconductor 9562
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AUD 0.5971
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- 5.5 A- 30 V58 mOhmsP - Channel  - 55 C+ 150 C1.5 WSmd/SmtECH - 8ReelSi2 Channel20 V13 nC   
TSM8588CV RGG


MOSFETs -60V, -4.5A, Complementary P-Channel Power MOSFET;60V, 5.7A N-Channel
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Taiwan Semiconductor 9560
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AUD 0.3025
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6.6 A , 8.2 A60 V98 mOhms , 168 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTPDFN33 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V8.6 nC , 9.6 nCEnhancement  
SQ2318AES-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay 9554
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AUD 0.2966
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8 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V8.7 nCEnhancement TrenchFET
FDC6333C


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 9552
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AUD 0.1429
Multiples of: 5

                   
MS3134KDFN


20V 750mA 200m@4.5V,500mA 1PCSNChannel DFN1006-3 MOSFETs ROHS
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MSKSEMI 9544
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AUD 0.0305
Multiples of: 20

                   
WNM6012-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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Will Semiconductor 9539
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AUD 0.0442
Multiples of: 10

                   
15P06


60V 15A 70m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL 9535
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AUD 0.1188
Multiples of: 5

                   
ISC0806NLSATMA1


MOSFET TRENCH >=100V
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Infineon 9528
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AUD 2.0444
Multiples of: 1

97 A100 V5.4 mOhmsN - Channel 2.3 V- 55 C+ 150 C96 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V20 nCEnhancement  
DMP32D5SFB-7B


MOSFET MOSFET BVDSS: 25V-30
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Diodes Incorporated 9525
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AUD 0.117
Multiples of: 1

- 300 mA- 30 V4 OhmsP - Channel - 2.3 V- 55 C+ 150 C1.2 WSmd/SmtX1 - DFN1006 - 3ReelSi1 Channel+/- 25 V4 nCEnhancement  
IAUT150N10S5N035ATMA1


OptiMOS-5 Power Transistor MOSFET N-Channel 100V 150A 8-Pin PG-HSOF-1 T/R
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Infineon 9524
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AUD 2.6362
Multiples of: 1

150 A100 V3.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C166 WSmd/SmtHSOF - 8Cut TapeSi1 Channel10 V67 nCEnhancementAec - Q101 
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