MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN86265P


MOSFET PT5 150/25V Pch PowerTrench MOSFET
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ON Semiconductor 13451
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AUD 0.66
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- 0.8 A- 150 V1.2 OhmsP - Channel25 V- 3.3 V- 55 C+ 150 C1.5 WSmd/SmtSUPERSOT - 3ReelSi1 Channel25 V2.9 nCEnhancement Powertrench
AON7522E


MOSFET N-CH 30V 21A 8DFN
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Alpha & Omega 9675
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AUD 0.2426
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TSM070NH04CV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9674
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AUD 0.6646
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54 A40 V N - Channel 3.6 V- 55 C+ 150 C36 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement PerFET
IRFR9120NTR(UMW)


TO-252 MOSFETs ROHS
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Youtai 9662
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AUD 0.3126
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CJBA3541K


MOSFET DFN1006-3L RoHS
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Changjing Electronics Technology 9661
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AUD 0.0362
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DMN2990UFZ-7B


Diodes Incorporated MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF
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Diodes Incorporated 9661
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AUD 0.0821
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250 mA20 V990 mOhmsN - Channel 1 V- 55 C+ 150 C320 mWSmd/SmtX2 - DFN0606 - 3Reel- +/- 8 V1 nCEnhancement  
TPH1500CNH1,LQ


MOSFETs 150V U-MOS VIII-H SOP-Advance(N) 15.4mohm
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Toshiba 9661
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AUD 1.0948
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38 A150 V15.4 mOhmsN - Channel 4 V- 55 C+ 150 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancement  
BSC018N04LS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 9656
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AUD 0.8363
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100 A40 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V150 nCEnhancement Optimos
MCAC011P03L-TP


MOSFETs P-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 9652
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AUD 0.2252
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50 A30 V10.5 mOhmsP - Channel 2.8 V- 55 C+ 150 C62.5 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V38 nCEnhancement  
CJBB3139K


MOSFET P Channel 20V 660mA 1.1V @ 250uA 520mO @ 1A,4.5V DFN1006-3L-A RoHS
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Changjing Electronics Technology 9651
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AUD 0.0379
Multiples of: 10

                   
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