MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LBSS8402DW1T1G


MOSFET N & P Trench 50V 130mA 1.5V @ 1mA,2V @ 250uA 3.5 Ω @ 200mA,5V;10 Ω @ 100mA,5V SC-88 RoHS
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Leshan 9650
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AUD 0.0409
Multiples of: 10

                   
TSM280NB06LCR RLG


MOSFET 60V 28A 28mOhm N-Chan Pwr MOSFET
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Taiwan Semiconductor 9649
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AUD 0.4363
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28 A60 V28 mOhmsN - Channel 1 V- 55 C+ 175 C56 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel20 V18 nCEnhancement  
DMN26D0UFB4-7B


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 9648
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AUD 0.0596
Multiples of: 10

                   
PMH550UNEH


MOSFET 30 V N-channel Trench MOSFET
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Nexperia 9646
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AUD 0.0611
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770 mA30 V670 mOhmsN - Channel 0.45 V- 55 C+ 150 C710 mWSmd/SmtDFN - 0606 - 3Cut TapeSi1 Channel8 V0.4 nCEnhancement  
50P03


30V 50A 14.5m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL 9646
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AUD 0.1252
Multiples of: 5

                   
60N04D


40V 60A 6.9mΩ 3V N Channel PDFN-8-EP(3x3) MOSFETs ROHS
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HL 9642
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AUD 0.0955
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DMP213DUFA-7B


Diodes Incorporated MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss
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Diodes Incorporated 9641
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AUD 0.0772
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166 mA25 V10 Ohmsp - channel - 0.9 V- 55 C+ 150 C360 mWsmd/smtX2 - DFN0806 - 3Reelsi1 channel+/- 8 V0.35 nCenhancement  
TSM070NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9636
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AUD 0.6646
Multiples of: 1

54 A40 V N - Channel 2.2 V- 55 C+ 150 C36 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V24 nCEnhancement PerFET
IRFR120TRLPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 9636
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AUD 1.1003
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
ZVN3320FTA


N-Channel 200 V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 9636
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AUD 0.1273
Multiples of: 5

60 mA200 V25 OhmsN - Channel 1 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
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