MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR3410TRPBF


MOSFET N Trench 100V 17A (Tc) 2V @ 250uA 105 mΩ @ 10A,10V DPAK RoHS
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Infineon 81480
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AUD 0.4677
Multiples of: 2000

15 A100 V155 mOhmsN - Channel  - 55 C+ 175 C52 WSmd/SmtDPAKReelSi1 Channel16 V22.7 nCEnhancement  
SI3401A-TP


MOSFET -20V, -4A,P Channel Mosfet
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Micro Commercial Components (MCC) 9067
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AUD 0.0837
Multiples of: 1

4.2 A30 V60 mOhmsP - Channel 1.3 V- 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V Enhancement  
DMP4050SSDQ-13


MOSFET 40V P-Ch Dual FET 20Vgs -4.2A 14.3
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Diodes Incorporated 9051
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AUD 0.8619
Multiples of: 1

5.2 A40 V38 mOhmsP - Channel 3 V- 55 C+ 150 C1.25 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V13.9 nCEnhancementAec - Q101 
AO4614


SOP-8 MOSFETs ROHS
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TECH PUBLIC 9050
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AUD 0.1505
Multiples of: 5

                   
BSZ123N08NS3 G


Infineon Technologies MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
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Infineon 9050
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AUD 0.8209
Multiples of: 1

10 A80 V12.3 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V25 nCEnhancement Optimos
IRFP064NPBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 59A,10V TO-247 (AC) RoHS
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Infineon 9049
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AUD 0.9013
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98 A55 V8 mOhmsN - Channel    150 WThrough HoleTO - 247ACTubeSi1 Channel20 V113.3 nC   
DMC4050SSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 9041
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AUD 0.5314
Multiples of: 1

         Smd/SmtSO - 8Cut TapeSi    Aec - Q101 
ES4407


30V 12A 9.5m@10V.12A 3.1W 1.5V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 9040
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AUD 0.1712
Multiples of: 1

                   
SI2319


SOT-23-3 MOSFETs ROHS
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Youtai 9031
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AUD 0.0451
Multiples of: 10

                   
DMN2020LSN-7


MOSFET MOSFET,N-CHANNEL
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Diodes Incorporated 8935
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AUD 0.1855
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 59Reel       
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