MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot SCH1430-TL-W


MOSFET NCH 1.8V Power MOSFE
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ON Semiconductor 8768
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AUD 0.165
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2 A20 V310 mOhmsN - Channel 400 mV- 55 C+ 150 C800 mWSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 12 V1.8 nCEnhancement  
DMHT3006LFJ-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 8766
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AUD 0.8258
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13 A30 V10 mOhmsN - Channel 1 V- 55 C+ 150 C2.1 WSMD/SMTV - DFN5045 - 12Reel , Cut TapeSi4 Channel- 20 V , 20 V17 nCEnhancement  
BSS138BKS


50V 300mA 1.5@10V,500mA 300mW 1.2V@250mA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 8463
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AUD 0.0292
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3415


20V 4.1A 30mΩ 1V P Channel SOT23 MOSFETs ROHS
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HL 7721
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AUD 0.0258
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BSZ042N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
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Infineon 4656
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AUD 0.9991
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98 A60 V4.9 mOhmsN - Channel 2.8 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V27 nCEnhancement OptiMOS
PJQ4453EP-AU_R2_002A1


MOSFETs 40V P-Channel Enhancement Mode MOSFET
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Panjit 3934
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AUD 0.5217
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55 A40 V11.6 mOhmsP - Channel 2.5 V- 55 C+ 175 C2.5 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V56 nCEnhancementAEC - Q101 
IAUTN12S5N017ATMA1


MOSFETs N
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Infineon 3871
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AUD 5.1543
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           Reel , Cut TapeSi    AEC - Q101OptiMOS
FH3040G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong 3787
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AUD 0.0832
Multiples of: 5

                   
ZVN4525ZTA


Diodes Incorporated MOSFET N-Chnl 250V
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Diodes Incorporated 970
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AUD 0.6254
Multiples of: 1000

240 mA250 V9.5 OhmsN - Channel40 V - 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3Reel    Enhancement  
DMN2451UFB4Q-7B


MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 0
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AUD 0.0647
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1.3 A20 V400 mOhmsN - Channel 1 V- 55 C+ 150 C660 mWSMD/SMT Reel , Cut TapeSi1 Channel- 12 V , + 12 V3.4 nCEnhancement  
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