MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX3008NBK,215


MOSFET 30V 400 MA N-CH TRENCH MOSFET
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Nexperia 13221
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AUD 0.0562
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236LS - 3Reel       
AO3400


SOT-23 MOSFETs ROHS
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DOWO 8904
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AUD 0.0288
Multiples of: 20

                   
IRFR210TRPBF


MOSFET 200V Vds, 20V Vgs DPAK (TO-252)
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Vishay 8889
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AUD 0.6304
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
90N03


TO-252 MOSFETs ROHS
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HL 8885
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AUD 0.0791
Multiples of: 5

                   
TP2104K1


Trans MOSFET P-CH Si 40V 0.16A 3-Pin SOT-23
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Microchip 8876
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AUD 1.1721
Multiples of: 1

160 mA40 V6 OhmsP - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3 Si1 Channel20 V Enhancement  
FDMS0310AS


MOSFET PT8 N 30/20 SYNCFET
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ON Semiconductor 8860
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AUD 0.4515
Multiples of: 1

19 A30 V3.6 mOhmsN - Channel20 V1.5 V- 55 C+ 150 C41 WSmd/SmtPOWER - 56 - 8ReelSi 20 V27 nC  Powertrench Syncfet
DMN31D4UFZ-7B


MOSFETs MOSFET BVDSS: 25V-30V X2-DFN0606-3 T&R 10K
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Diodes Incorporated 8846
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AUD 0.0437
Multiples of: 1

           Reel , Cut TapeSi      
DMN65D8LFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
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Diodes Incorporated 8839
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AUD 0.0591
Multiples of: 1

400 mA60 V3 OhmsN - Channel20 V2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 2ReelSi1 Channel10 V Enhancement  
DMP10H4D2S-7


MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF
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Diodes Incorporated 8666
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AUD 0.0645
Multiples of: 5

270 mA100 V4.2 OhmsP - Channel 1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.8 nCEnhancement  
IRFP4668PBF


MOSFET N Trench 200V 130A 5V @ 250uA 9.7 mΩ @ 81A,10V TO-247 (AC) RoHS
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Infineon 1068
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AUD 6.8064
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
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