MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLU024NPBF


MOSFET N Trench 55V 17A 2V @ 250uA 65 mΩ @ 10A,10V TO-251 (I-PAK) RoHS
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Infineon 12484
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AUD 0.5872
Multiples of: 1

            Hexfet®      
BUK9M12-60EX


Trans MOSFET N-CH 60V 54A 8-Pin LFPAK-33 T/R
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Nexperia 11640
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AUD 0.5051
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         Smd/SmtLFPAK33 - 4Cut TapeSi      
US6U37TR


ROHM Semiconductor MOSFET N Chan30V-1.5A 2.5V Drive
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ROHM 8730
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AUD 0.4118
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1.5 A30 V240 mOhmsN - Channel12 V - 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi1 Channel12 V Enhancement  
IPN65R1K5CEATMA1


Transistor: N-MOSFET; unipolar; 650V; 3.3A; 5W; PG-SOT223
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Infineon 8730
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AUD 0.4129
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            coolmos ce      
SQJB80EP-T1_GE3


MOSFET 80V Vds 30A Id AEC-Q101 Qualified
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Vishay 8730
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AUD 0.6377
Multiples of: 3000

30 A80 V15.5 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V32 nCEnhancementAec - Q101Trenchfet
PMCM4401VPEZ


MOSFET 12V P-Channel Trench MOSFET
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Nexperia 8709
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AUD 0.3613
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4.9 A12 V55 mOhmsP - Channel 900 mV- 55 C+ 150 C12.5 WSmd/SmtWLCSP - 4Cut TapeSi1 Channel8 V10 nCEnhancement  
ZXM62P02E6TA


P-Channel 20 V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 5820
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AUD 0.4988
Multiples of: 3000

2.3 A20 V200 mOhmsP - channel 700 mV- 55 C+ 150 C1.1 WSmd/smtSOT - 23 - 6ReelSi1 Channel- 4.5 V Enhancement  
FDMA8051L


MOSFET 40V Single N-Channel PowerTrenchMOSFET
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ON Semiconductor 2718
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AUD 0.6625
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10 A40 V18 mOhmsN - Channel 1.6 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6 2X2ReelSi1 Channel 14 nC  Powertrench
SQ7414CENW-T1_GE3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 596
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AUD 0.4333
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18 A60 V23 mOhmsN - Channel 1.5 V- 55 C+ 175 C62 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101 
BS250FTA


45V 90mA 14O@200mA,10V 330mW P Channel SOT-23-3 MOSFETs ROHS
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Diodes Incorporated 76
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AUD 0.3862
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90 mA45 V9 OhmsP - Channel  - 55 C+ 150 C330 mW (1/3 w)Smd/SmtSOT - 23ReelSi1 Channel20 V Enhancement  
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