MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK3018W


SOT-323 MOSFETs ROHS
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Bourne 8730
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AUD 0.021
Multiples of: 20

                   
2N7002K-T1-GE3


N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 8730
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AUD 0.041
Multiples of: 3000

300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 125 C0.35 WSmd/SmtSOT - 23ReelSi1 Channel10 V0.4 nCEnhancement  
SN7002NH6327XTSA2


MOSFET N-Ch 60V 200mA SOT-23-3
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Infineon 8730
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AUD 0.0429
Multiples of: 3000

200 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C0.36 WSmd/SmtPG - SOT - 23 - 3Cut TapeSi1 Channel10 V1 nC   
IRLML0040


40V 3.6A N Channel SOT-23 MOSFETs ROHS
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Hottech 8730
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AUD 0.058
Multiples of: 10

                   
BSS123Q-7


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
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Diodes Incorporated 8730
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AUD 0.0595
Multiples of: 3000

                   
DMN2600UFB-7


MOSFET N Trench 25V 1.3A 1V @ 250uA 350 mΩ @ 200mA,4.5V X1-DFN1006-3 RoHS
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Diodes Incorporated 8730
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AUD 0.0638
Multiples of: 3000

1.3 A25 V600 mOhmsN - Channel     Smd/SmtDFN - 1006 - 3Reel       
BSN20Q-7


MOSFET MOSFET BVDSS:
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Diodes Incorporated 8730
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AUD 0.0776
Multiples of: 3000

500 mA50 V1.3 OhmsN - Channel 400 mV- 55 C+ 150 C920 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V800 pCEnhancementAec - Q101 
IRLML2246TRPBF


MOSFET P Trench 20V 2.6A 1.1V @ 10uA 135 mΩ @ 2.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 8730
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AUD 0.1035
Multiples of: 1

2.6 A20 V157 mOhmsP - Channel 1.1 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V2.9 nC   
DMN2400UV-7


MOSFET MOSFET,N-CHANNEL
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Diodes Incorporated 8730
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AUD 0.12
Multiples of: 3000

1.33 A20 V480 mOhmsN - Channel 500 mV- 55 C+ 150 C530 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel5 V0.5 nCEnhancement  
2N7002KDW-TP


MOSFET Dual N-Ch 60Vds 20Vgs 340mA 150mW
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Micro Commercial Components (MCC) 614
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AUD 0.1713
Multiples of: 1

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