MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1469DH-T1-E3


MOSFET 20V 2.7A 2.78W 80 mohms @ 10V
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Vishay 9452
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AUD 0.3492
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 363 - 6ReelSi     Trenchfet
MCU60P06-TP


MOSFET P-Ch -60Vds 20Vgs 130W -60A -260A Idm
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Micro Commercial Components (MCC) 9445
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AUD 1.7408
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           Cut Tape       
BUK7Y8R7-60EX


NXP Semiconductors MOSFET
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Nexperia 9441
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AUD 1.004
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87 A60 V8.7 mOhmsN - Channel 3 V- 55 C+ 175 C147 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V46 nCEnhancement  
BSC0902NSI


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
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Infineon 9437
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AUD 0.4557
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100 A30 V2.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V   Optimos
CSD19538Q2R


MOSFETs 100-V, N channel NexFET power MOSFET, single SON 2 mm x 2 mm, 59 mOhm
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Texas Instruments 9428
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AUD 0.4505
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14.4 A100 V59 mOhmsN - Channel 3.8 V- 55 C+ 150 C20.2 WSMD/SMTWSON - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.3 nCEnhancement  
DMN62D1LFB-7B


MOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10K
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Diodes Incorporated 9413
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AUD 0.0925
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320 mA60 V2 OhmsN - Channel 600 mV- 55 C+ 150 C0.5 WSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V0.9 nCEnhancement  
BSS84KNC


PDFN1006-3 MOSFETs ROHS
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Siliup 9409
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AUD 0.0144
Multiples of: 50

                   
SSM10N954L,EFF(S


TCSPAC-153001 MOSFETs ROHS
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Toshiba 9402
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AUD 0.361
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SN7002WH6433XTMA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 9392
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AUD 0.0489
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   P - Channel     Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel     
SQ2318CES-T1_GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 9392
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AUD 0.2968
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7 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3 Si1 Channel- 20 V , + 20 V8.9 nCEnhancement  
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