MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFHE4250DTRPBF


MOSFET MOSFET, 25V,60 A Power Block PQFN 6x6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 8730
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AUD 3.1473
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86 A , 303 A25 v , 25 V4.1 mOhms , 1.35 mOhmsN - Channel16 V1.6 v , 1.6 V  156 w , 156 WSmd/SmtPQFN - 6X6ReelSi 16 V13 nC , 35 nC   
BSD214SN H6327


Infineon Technologies MOSFET
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Infineon 8728
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AUD 0.1278
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1.5 A20 V111 mOhmsP - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi1 Channel12 V800 pCEnhancement  
BSZ050N03LS G


Infineon Technologies MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Infineon 8712
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AUD 0.5239
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16 A30 V5 mOhmsN - Channel 2.2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V8.4 nCEnhancement Optimos
IRFR110TRLPBF-BE3


N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 8692
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AUD 0.6115
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4.3 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V8.3 nCEnhancement  
AO3401


SOT-23 MOSFETs ROHS
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DOWO 8652
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AUD 0.0302
Multiples of: 20

                   
DMN2056U-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 8628
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AUD 0.1179
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NVMTS0D4N04CLTXG


MOSFET AFSM T6 40V LL NCH
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ON Semiconductor 8555
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AUD 8.9886
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553.8 A40 V400 uOhmsN - Channel 2.5 V- 55 C+ 175 C244 WSmd/SmtPQFN - 88 - 8Cut TapeSi1 Channel20 V341 nCEnhancementAec - Q101 
HSS0127


MOSFET P Channel 100V 900mA 2.5V @ 250uA 650mΩ @ 0.8A,10V SOT-23L RoHS
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HUASHUO 8259
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AUD 0.0778
Multiples of: 5

                   
PJA3441_R1_00001


MOSFET P Trench 40V 3.1A 2.5V @ 250uA 88 mΩ @ 3.1A,10V SOT-23 RoHS
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Panjit 4020
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AUD 0.083
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3.1 A40 V88 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V6 nCEnhancement  
SI7439DP-T1-E3


MOSFET 150V 5.2A 5.4W 90mohm @ 10V
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Vishay 2910
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AUD 3.5241
Multiples of: 3000

5.2 A150 V90 mOhmsP - Channel 2 V- 55 C+ 150 C5.4 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V88 nCEnhancement Trenchfet
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