MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STR2N2VH5


MOSFET N-CH 20V 0.025Ohm 23A STripFET V
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STMicroelectronics 8730
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AUD 0.2144
Multiples of: 3000

2.3 A20 V30 mOhmsN - Channel8 V0.7 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V6 nC  Stripfet
SI1480DH-T1-GE3


Vishay Semiconductors MOSFET 100V 200mOhm10V 2.3A N-Ch
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Vishay 8730
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AUD 0.2446
Multiples of: 3000

2.6 A100 V200 mOhmsN - Channel20 V1.6 v to 3 V- 55 C+ 150 C2.8 WSmd/SmtSOT - 363 - 6ReelSi1 Channel20 V1.8 nCEnhancement Thunderfet Trenchfet
BSR202NL6327HTSA1


Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
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Infineon 8730
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AUD 0.2649
Multiples of: 3000

            Optimos 2      
SIA427ADJ-T1-GE3


MOSFET -8V Vds 5V Vgs PowerPAK SC-70
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Vishay 8730
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AUD 0.2731
Multiples of: 3000

- 12 A- 8 V16 mOhmsP - Channel5 V- 800 mV- 55 C+ 150 C19 WSmd/SmtSC - 70 - 6Reel   33 nC   
MCH6336-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor 8730
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AUD 0.281
Multiples of: 1

         smd/smtSOT - 363 - 6Cut Tapesi      
FDN8601


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 8730
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AUD 0.2896
Multiples of: 3000

2.7 A100 V85.4 mOhmsn channel 3 V  1.5 Wsmd/smtSSOT - 3Cut Tapesi1 channel20 V3 nC  powertrench
ZVN4106FTA


N-Channel 60 V 200mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 8730
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AUD 0.3168
Multiples of: 3000

200 mA60 V2.5 OhmsN - channel 1.3 V- 55 C+ 150 C330 mWSmd/smtSOT - 23ReelSi1 Channel10 V Enhancement  
FDC6420C


SOT-23-6 MOSFETs ROHS
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ON Semiconductor 8730
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AUD 0.3586
Multiples of: 1000

3 A , 2.2 A20 V70 mOhmsN - Channel, P - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
SIAA40DJ-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SC-70
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Vishay 8730
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AUD 0.3619
Multiples of: 1

           Cut TapeSi     Trenchfet
DMP2160UFDB-7


MOSFET 20V 3.8A DUAL P-CHAN
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Diodes Incorporated 0
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AUD 0.166
Multiples of: 3000

3.8 A20 V70 mOhms , 70 mOhmsp - channel 450 mV- 55 C+ 150 C1.4 Wsmd/smtDFN - 6Reelsi2 channel- 4.5 V6.5 nCenhancement  
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