MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI8489EDB-T2-E1


P-Channel 20 V 3.06A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
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Vishay 8615
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AUD 0.2506
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- 700 mA- 20 V44 mOhmsP - Channel - 0.5 v to - 1.2 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi1 Channel12 V9.5 nCEnhancement Microfoot Trenchfet
DMN601WKQ-13


MOSFET 2N7002 Family
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Diodes Incorporated 8601
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AUD 0.093
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         Smd/SmtSOT - 323 - 3Cut TapeSi    Aec - Q101 
IPN60R1K0PFD7SATMA1


null 4.7A 6W 1O@10V,1A null SOT-223-4 MOSFETs ROHS
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Infineon 8596
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AUD 0.3743
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5.2 A650 V1 OhmsN - Channel 4 V- 55 C+ 150 C31.3 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , 20 V6 nCEnhancement  
DMT3009LDT-7


30V 30A 11.1mO@10V,14.4A 1.2W 2 N-Channel(Half Bridge) V-DFN3030-8K MOSFETs ROHS
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Diodes Incorporated 8579
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AUD 0.2831
Multiples of: 5

         Smd/SmtV - DFN3030 - K - 8Cut TapeSi      
2N7002T


SOT-523 MOSFETs ROHS
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Bourne 8225
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AUD 0.0218
Multiples of: 20

                   
IPD068P03L3GATMA1


Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
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Infineon 7993
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AUD 0.6633
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            Optimos P3      
TK72E12N1,S1X


Toshiba MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
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Toshiba 6838
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AUD 0.4369
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179 A120 V3.6 mOhmsN - Channel20 V2 v to 4 V + 150 C255 WThrough HoleTO - 220 - 3ReelSi1 Channel10 V130 nCEnhancement  
4614


40V 1PCSNChannel+1PCSPChannel SOP-8 MOSFETs ROHS
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HL 6678
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AUD 0.0872
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Hot IRF9540NSTRLPBF


Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
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Infineon 5646
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AUD 1.0318
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23 A100 V117 mOhmsP - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V64.7 nC   
IPG20N06S2L65ATMA1


Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
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Infineon 1602
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AUD 0.7569
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