MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7172DP-T1-GE3


MOSFET 200V 25A 96W 70mohm @ 10V
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Vishay 8730
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AUD 2.2187
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
STB140NF75T4


MOSFET N-Ch 75 Volt 120 Amp
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STMicroelectronics 8730
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AUD 2.3556
Multiples of: 1000

120 A75 V7.5 mOhmsN - Channel  - 55 C+ 175 C310 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V Enhancement  
IRFHE4250DTRPBF


MOSFET MOSFET, 25V,60 A Power Block PQFN 6x6
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Infineon 8730
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AUD 3.497
Multiples of: 1

86 A , 303 A25 v , 25 V4.1 mOhms , 1.35 mOhmsN - Channel16 V1.6 v , 1.6 V  156 w , 156 WSmd/SmtPQFN - 6X6ReelSi 16 V13 nC , 35 nC   
IXFA10N80P


MOSFET 10 Amps 800V 1.1 Rds
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IXYS 8729
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AUD 3.4313
Multiples of: 1

10 A800 V1.1 Ohmsn - channel  - 55 C+ 150 C300 Wsmd/smtTO - 263 - 3Tubesi1 channel30 V enhancement hiperfet
BSD214SN H6327


Infineon Technologies MOSFET
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Infineon 8728
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AUD 0.1278
Multiples of: 1

1.5 A20 V111 mOhmsP - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi1 Channel12 V800 pCEnhancement  
IRFU220NPBF


Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
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Infineon 8727
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AUD 0.4437
Multiples of: 1

5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WThrough HoleIPAKTubeSi1 Channel20 V15 nCEnhancement  
SSM6L09FUTE85LF


Mosfet Array N and P-Channel 30V 400mA, 200mA 300mW Surface Mount US6
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Toshiba 8725
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AUD 0.1733
Multiples of: 5

400 mA30 V4 OhmsN - Channel, P - Channel 1.8 v , - 1.8 V  300 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel     
TSM080N03EPQ56 RLG


MOSFET 30V 55A Single N-Channel Power MOSFET
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Taiwan Semiconductor 8723
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AUD 0.3824
Multiples of: 1

55 A30 V6.5 mOhmsN - Channel 1 V- 55 C+ 150 C54 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement  
FDMA1024NZ


MOSFET 20V Dual N-Channel PowerTrench
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ON Semiconductor 8711
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AUD 0.4679
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5 A20 V54 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtMICRO - FET - 6ReelSi2 Channel8 V Enhancement Powertrench
FDPF39N20


Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
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ON Semiconductor 7973
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AUD 1.6369
Multiples of: 1

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