MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS468DN-T1-GE3


MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 8730
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AUD 0.9204
Multiples of: 3000

30 A80 V19.5 mOhmsn - channel 1.5 V- 55 C+ 150 C52 Wsmd/smtPOWERPAK 1212 - 8Reelsi1 channel20 V28 nCenhancement trenchfet, powerpak
STL42P6LLF6


MOSFET P-channel 60 V, 0.023 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 8730
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AUD 1.3049
Multiples of: 3000

42 A60 V34 mOhmsP - Channel 1 V- 55 C+ 175 C100 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi1 Channel4.5 V30 nCEnhancement Stripfet
NTTFS3A08PZTAG


MOSFET PFET U8FL 20V 14A 6.7MOHM
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ON Semiconductor 8730
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AUD 1.1735
Multiples of: 1

14 A20 V6.7 mOhmsp - channel    2.2 Wsmd/smtWDFN - 8Reelsi      
DMHT6016LFJ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 8730
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AUD 1.2543
Multiples of: 1

10.6 A60 V17 mOhmsN - Channel 1 V- 55 C+ 150 C1.16 WSmd/SmtV - DFN5045 - 12Cut TapeSi4 Channel20 V17 nCEnhancement  
STB60NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
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STMicroelectronics 8730
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AUD 1.4157
Multiples of: 1000

   N Channel               
STL13N65M2


STMicroelectronics MOSFET
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STMicroelectronics 8730
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AUD 1.5994
Multiples of: 3000

6.5 A650 V365 mOhmsn - channel 2 V + 150 C52 Wsmd/smtPowerflat - 8Reelsi1 channel25 V17 nCenhancement mdmesh
SI7489DP-T1-GE3


P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 8730
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AUD 1.7196
Multiples of: 3000

28 A100 V41 mOhmsP - Channel 1 V- 55 C+ 150 C83 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V106 nCEnhancement Trenchfet
STB18N60DM2


Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
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STMicroelectronics 8730
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AUD 1.8271
Multiples of: 1000

            Supermesh      
STL8N10LF3


STMicroelectronics MOSFET N-Ch 100 V 25 mOhm 7.8 A STripFET III
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STMicroelectronics 5820
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AUD 1.3168
Multiples of: 3000

7.8 A100 V35 mOhmsN - Channel 1 v to 3 V- 55 C+ 175 C70 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V20.5 nCEnhancementAec - Q101Stripfet
BUK98180-100ACUX


MOSFET N Trench 100V 4.6A (Tc) 2V @ 1mA 173 mΩ @ 5A,10V SC-73 (SOT223) RoHS
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Nexperia 0
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AUD 1.1474
Multiples of: 1000

4.6 A100 V147 mOhmsN - Channel 1 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V Enhancement  
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