MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3473CDV-T1-GE3


MOSFET 12V 8.0A 4.2W 22mohm @ 4.5V
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Vishay 8730
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AUD 0.4052
Multiples of: 3000

8 A12 V22 mOhmsP - Channel 400 mV- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6ReelSi1 Channel- 4.5 V43 nCEnhancement Trenchfet
SISS27DN-T1-GE3


Vishay Semiconductors MOSFET -30V 5.6mOhm10V -50A P-Ch G-III
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Vishay 8730
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AUD 0.4125
Multiples of: 3000

- 50 A- 30 V5.6 mOhmsP - Channel - 1 v to - 2.2 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel20 V45 nCEnhancement Trenchfet Power Mosfet
FDC637AN


MOSFET SSOT-6 N-CH 20V
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ON Semiconductor 8730
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AUD 0.4496
Multiples of: 3000

6.2 A20 V24 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel8 V Enhancement Powertrench
QS8K11TCR


MOSFET 4V Drive Nch+Nch Si MOSFET
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ROHM 8730
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AUD 0.4942
Multiples of: 1

3.5 A30 V35 mOhms , 35 mOhmsN - Channel 1 V + 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi2 Channel20 V7 nC , 7 nCEnhancement  
SISS65DN-T1-GE3


MOSFET -30V Vds -+20V Vgs PowerPAK 1212-8S
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Vishay 8730
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AUD 0.5738
Multiples of: 1

94 A30 V4.6 mOhmsP - Channel 2.3 V- 55 C+ 150 C65.8 WSmd/SmtPOWERPAK - 1212 - 8S - 8Cut TapeSi1 Channel20 V138 nCEnhancement Trenchfet, Powerpak
HT8KB5TB1


MOSFETs 40V 12A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KB5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 8730
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AUD 0.6757
Multiples of: 1

12 A40 V47 mOhmsN - Channel 2.5 V- 55 C+ 150 C13 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.5 nCEnhancement  
SI7288DP-T1-GE3


MOSFET 40V 20A DUAL N-CH MOSFET
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Vishay 8730
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AUD 0.7407
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
FDPC8012S


Fairchild Semiconductor MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
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ON Semiconductor 8730
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AUD 0.8744
Multiples of: 3000

88 A25 V7.5 Ohmsn - channel12 V1.6 V- 55 C+ 150 C2 Wsmd/smtPowerclip - 33 - 8Reelsi2 channel12 V25 nC  powertrench syncfet power clip
SI7949DP-T1-E3


Mosfet Array 2 P-Channel (Dual) 60V 3.2A 1.5W Surface Mount PowerPAK® SO-8 Dual
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Vishay 8730
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AUD 0.8832
Multiples of: 3000

3.2 A- 60 V64 mOhmsP - Channel20 V - 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi   Enhancement Trenchfet
VN2110K1-G


Transistor: N-MOSFET; unipolar; 100V; 0.6A; 360mW; SOT23-3
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Microchip 1896
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AUD 0.7076
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200 mA100 V4 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
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