MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF3415SPBF


Transistor: N-MOSFET; unipolar; 150V; 43A; 3.8W; D2PAK
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Infineon 8680
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AUD 1.0634
Multiples of: 1

43 A150 V42 mOhmsN - Channel  - 55 C+ 175 C3.8 WSmd/SmtD2PAKTubeSi1 Channel20 V133.3 nCEnhancement  
SSM5H16TU,LF


MOSFET Small Signal MOSFET N-ch + SBD VDSS=30V VR=30VISBD=0.8AVGSS=+-12VID=1.9ARDSON=0.103Ohm@4V
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Toshiba 8673
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AUD 0.1867
Multiples of: 1

1.9 A30 V133 mOhmsN - Channel 1 V- 55 C+ 125 C0.5 WSmd/SmtUFV - 5Cut TapeSi1 Channel12 V1.9 nCEnhancement  
BSS127IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 8591
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AUD 0.0788
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21 mA600 V500 OhmsN - Channel 2.6 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V650 pCEnhancement  
TPM4016PS8-2


SOP-8 MOSFETs ROHS
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TECH PUBLIC 8529
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AUD 0.402
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FDS6680A


SOP-8 MOSFETs ROHS
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TECH PUBLIC 8424
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AUD 0.2678
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Hot RQ6E045RPTR


MOSFET PCH -30V -4.5A SMALL SIGNAL
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ROHM 8182
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AUD 0.519
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4.5 A30 V35 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel20 V14 nCEnhancement  
2N7002


MOSFET N Trench 60V 115mA 2.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 RoHS
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SLKORMICRO 6741
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AUD 0.0115
Multiples of: 50

                   
PMZ290UNE2YL


NXP Semiconductors MOSFET 20V N-Channel Trench MOSFET
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Nexperia 4374
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AUD 0.0592
Multiples of: 10

1.2 A20 V210 mOhmsN - Channel 0.95 V- 55 C+ 150 C715 mWSmd/SmtDFN1006 - 3ReelSi1 Channel8 V1.4 nvEnhancement  
NTZD3155CT2G


ON Semiconductor MOSFET COMP 540mA 20V
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ON Semiconductor 1954
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AUD 0.1477
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540 mA , - 430 mA20 V1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel6 V1.5 nC , 1.7 nCEnhancement  
SIRA18DDP-T1-UE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 0
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AUD 0.2216
Multiples of: 1

                   
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