MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302CDS-T1-E3


MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
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Vishay 11640
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AUD 0.1808
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
NTR3C21NZT1G


MOSFET 20 V SANYO T6 NCH IN
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ON Semiconductor 8730
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AUD 0.1403
Multiples of: 3000

3.6 A20 V24 mOhmsN - Channel 450 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V17.8 nCEnhancement  
HSBB0012


MOSFET N Channel 100V 20A 2.5V @ 250uA 105mΩ @ 5A,10V PRPAK3*3 RoHS
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HUASHUO 8730
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AUD 0.1416
Multiples of: 5

                   
DMN2075UDW-7


MOSFET MOSFET BVDSS: 8V-24V SOT363,3K
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Diodes Incorporated 8730
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AUD 0.1444
Multiples of: 3000

2.8 A20 V48 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT363 - 6ReelSi1 Channel8 V7 nCEnhancement  
SSM3J134TU,LF


MOSFET LowON Res MOSFET ID=-3.2A VDSS=-20V
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Toshiba 8730
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AUD 0.1519
Multiples of: 1

3.2 A20 V93 mOhmsP - Channel 1 V + 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel8 V4.7 nCEnhancement  
5HN01C-TB-E


MOSFET NCH 4V DRIVE SERIES
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ON Semiconductor 8730
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AUD 0.1718
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0.1 A50 V7.5 Ohmsn - channel20 V - 55 C+ 150 C smd/smtCP - 3Reelsi1 channel20 V    
DMN1019UVT-7


Diodes Incorporated MOSFET 12V Enh Mode FET
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Diodes Incorporated 8730
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AUD 0.1739
Multiples of: 3000

11 A12 V7 mOhmsN - Channel 350 mV- 55 C+ 150 C2.17 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V50.6 nCEnhancement  
FDC655BN


Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
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ON Semiconductor 8730
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AUD 0.1765
Multiples of: 3000

   N Channel               
FDN359AN


Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
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ON Semiconductor 8730
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AUD 0.1836
Multiples of: 3000

   N Channel               
3LN01M-TL-E


MOSFET Small Signal MOSFET, 30V, 3.7O, 0.15A, Single N-Channel
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ON Semiconductor 8730
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AUD 0.1903
Multiples of: 1

150 mA30 V2.9 Ohmsn - channel  - 55 C+ 150 C150 mWsmd/smtMCPH - 3Cut Tapesi1 channel10 V1.58 nC   
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