MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD50N04S4L08ATMA1


Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
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Infineon 9473
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AUD 0.4318
Multiples of: 1

50 A40 V6.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C46 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 16 v , 20 V30 nCEnhancementAec - Q101 
BSC067N06LS3GATMA1


Infineon Technologies MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
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Infineon 9028
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AUD 0.839
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50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V67 nCEnhancement Optimos
2N7002VAC-7


Diodes Incorporated MOSFET Dual N-Channel
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Diodes Incorporated 9024
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AUD 0.1711
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280 mA60 V13.5 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel20 V Enhancement  
RSR025N03HZGTL


MOSFET NCH 30V 2.5A SMALL SIGNAL MOSF
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ROHM 9023
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AUD 0.289
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2.5 A30 V70 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V2.9 nCEnhancementAec - Q101 
DMN2040U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 9010
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AUD 0.1133
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6 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.36 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V7.5 nCEnhancement  
BUK7S2R5-40HJ


MOSFET MOSFET DISCRETES
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Nexperia 8995
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AUD 1.3809
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140 A40 V2.5 mOhmsN - Channel 4.3 V- 55 C+ 175 C135 WSMD/SMTLFPAK - 88 - 4Cut Tape , ReelSi1 Channel- 10 V , + 20 V38 nCEnhancementAEC - Q100 
PJT7800_R1_00001


MOSFET 2 N Channel (Dual) 20V 1A 1V @ 250uA 150 mΩ @ 1A,4.5V SOT-363 RoHS
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Panjit 8986
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AUD 0.1149
Multiples of: 1

                   
FCD1300N80Z


Fairchild Semiconductor MOSFET
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ON Semiconductor 8982
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AUD 1.366
Multiples of: 1

4 A800 V1.3 OhmsN - Channel20 v , 30 V4.5 V- 55 C+ 150 C52 WSmd/SmtDPAK - 3ReelSi1 Channel20 v , 30 V16.2 nC  Superfet Ii
NDB6030PL


MOSFET P-Ch LL FET Enhancement Mode
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ON Semiconductor 8973
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AUD 1.6629
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   p - channel  - 65 C+ 175 C smd/smtTO - 263Reel       
IRF9Z24NPBF


MOSFET P Trench 55V 12A 4V @ 250uA 175 mΩ @ 7.2A,10V TO-220 (TO-220-3) RoHS
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Infineon 8894
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AUD 0.264
Multiples of: 5

   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
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