MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCH041N65EFL4


MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET
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ON Semiconductor 9603
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AUD 17.5554
Multiples of: 450

76 A650 V36 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 4Bulksi1 channel+/- 20 v , +/- 30 V298 nCenhancement superfet ii unifet frfet
TSM056NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9602
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AUD 0.8585
Multiples of: 1

54 A40 V N - Channel 2.2 V- 55 C+ 150 C34 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V16 nCEnhancement PerFET
DMP2045UQ-13


MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 10K
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Diodes Incorporated 9598
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AUD 0.2059
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IPD050N10N5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 9594
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AUD 1.7869
Multiples of: 1

80 A100 V4.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C150 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V64 nCEnhancement Optimos
BSC052N03LS


MOSFET N-Channel 30V MOSFET
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Infineon 9592
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AUD 0.4557
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57 A30 V5.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C28 WSmd/SmtTDSON - 8ReelSi1 Channel10 V12 nCEnhancement Optimos
YJH03N10A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
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Yangjie 9578
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AUD 0.1444
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            Trench Power Mv      
BSZ16DN25NS3 G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon 9575
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AUD 1.403
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10.9 A250 V146 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V11.4 nCEnhancement Optimos
IPD60R3K3C6ATMA1


Infineon Technologies MOSFET N-Ch 650V 1.7A DPAK-2
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Infineon 9572
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AUD 0.3789
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1.7 A600 V3.3 OhmsN - Channel 3 V- 55 C+ 150 C18.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V4.6 nC   
KBA3134K


DFN1006-3L MOSFETs ROHS
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Yongyutai Electronics 9564
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AUD 0.0204
Multiples of: 20

                   
AO4264E


MOSFET N Trench 60V 13.5A 2.4V @ 250uA 9.8 mΩ @ 13.5A,10V SOIC-8 RoHS
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Alpha & Omega 9394
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AUD 0.1629
Multiples of: 5

                   
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