MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP250MPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon 9700
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AUD 0.7344
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247AC - 3Tube       
FDMS030N06B


N-Channel 60 V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
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ON Semiconductor 9459
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AUD 2.7587
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100 A60 V2.4 mOhmsN - Channel 3.3 V- 55 C+ 150 C104 WSmd/SmtPOWER56ReelSi1 Channel20 V75 nCEnhancement Powertrench
MCACD033N10YLHE3-TP


MOSFETs DUAL N-CHANNEL MOSFET,PDFN5060-8D
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Micro Commercial Components (MCC) 9457
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AUD 0.6111
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20 A100 V33 mOhmsN - Channel 2.2 V- 55 C+ 175 C41 WSMD/SMTPDFN5060 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V12.7 nCEnhancement  
SI1469DH-T1-E3


MOSFET 20V 2.7A 2.78W 80 mohms @ 10V
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Vishay 9452
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AUD 0.3492
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 363 - 6ReelSi     Trenchfet
CSD19538Q2R


MOSFETs 100-V, N channel NexFET power MOSFET, single SON 2 mm x 2 mm, 59 mOhm
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Texas Instruments 9428
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AUD 0.4505
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14.4 A100 V59 mOhmsN - Channel 3.8 V- 55 C+ 150 C20.2 WSMD/SMTWSON - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.3 nCEnhancement  
IPD50N06S4L08ATMA2


60V 50A 7.8mO@50A,10V 71W N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 9414
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AUD 0.7057
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
DMN62D1LFB-7B


MOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10K
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Diodes Incorporated 9413
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AUD 0.0925
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320 mA60 V2 OhmsN - Channel 600 mV- 55 C+ 150 C0.5 WSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V0.9 nCEnhancement  
IRLH5034TRPBF


Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
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Infineon 9409
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AUD 1.2547
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100 A40 V3.2 mOhmsN - Channel    250 WSmd/SmtPQFN - 8ReelSi1 Channel16 V82 nC   
TSM2537CQ RFG


MOSFET MOSFET Complementary N-Ch, 20V, 11.6A
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Taiwan Semiconductor 9393
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AUD 0.3143
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11.6 A , 9 A20 V17 mOhms , 48 mOhmsN - Channel, P - Channel 500 mV , 450 mV- 55 C+ 150 C6.25 w , 6.25 WSmd/SmtTDFN22 - 6Cut TapeSi2 Channel4.5 v , - 4.5 V9.1 nC , 9.8 nCEnhancement  
SI2312


20V 5A null SOT-23 MOSFETs ROHS
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Hottech 7624
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AUD 0.033
Multiples of: 10

                   
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