MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6N55NU,LF


Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
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Toshiba 95882
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AUD 0.16
Multiples of: 1

4 A30 V64 mOhmsN - Channel 1.3 v to 2.5 V- 55 C+ 150 C1 WSmd/SmtUDFN - 6ReelSi2 Channel20 V2.5 nC   
NDS0605


MOSFET P-Channel FET Enhancement Mode
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ON Semiconductor 55290
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AUD 0.078
Multiples of: 3000

180 mA60 V5 OhmsP - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
IRF6795MTRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
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Infineon 9312
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AUD 1.7026
Multiples of: 4800

160 A25 V2.4 mOhmsN - Channel20 V1.8 V- 40 C+ 150 C2.8 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V35 nC  Directfet
FDMC86520DC


MOSFET 60V N-Chan Dual Cool PowerTrench MOSFET
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ON Semiconductor 9308
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AUD 2.4829
Multiples of: 1

40 A60 V6.3 mOhmsn - channel 3.7 V- 55 C+ 150 C73 Wsmd/smtPOWER33Reelsi1 channel20 V29 nCenhancement powertrench
BSP129 H6906


MOSFET N-Ch 240V 50mA SOT-223-3
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Infineon 9291
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AUD 0.7634
Multiples of: 1

350 mA240 V4.2 Ohmsn - channel 2.1 V- 55 C+ 150 C1.8 Wsmd/smtSOT - 223 - 4Reelsi1 channel20 V5.7 nCdepletion  
WNM2046C-3/TR


MOSFET DFN1006-3L RoHS
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Will Semiconductor 9195
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AUD 0.0979
Multiples of: 10

                   
IRLML5203


30V 3A P Channel SOT-23 MOSFETs ROHS
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Hottech 8603
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AUD 0.0459
Multiples of: 10

                   
AO3415


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8186
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AUD 0.0453
Multiples of: 10

                   
FQP6N90C


Transistor: N-MOSFET; unipolar; 900V; 3.8A; 167W; TO220AB
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ON Semiconductor 6413
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AUD 1.6054
Multiples of: 1

            Qfet®      
FDS8880


Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
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ON Semiconductor 2048
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AUD 0.5498
Multiples of: 1

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