MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOD2610E


MOSFET N Trench 60V 46A (Tc) 2.4V @ 250uA 9.5 mΩ @ 20A,10V TO-252 RoHS
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Alpha & Omega 9607
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AUD 0.3687
Multiples of: 1

                   
WTM2300


20V 6A 20mΩ@4.5V,5A 1.25W N Channel SOT-23 MOSFETs ROHS
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WPMtek 9603
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AUD 0.0165
Multiples of: 20

                   
HY12P03C2


MOSFET P Trench 30V 50A (Tc) 3V @ 250uA 11.5 mΩ @ 12A,10V PPAK5*6-8L RoHS
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HuaYi 9603
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AUD 0.1695
Multiples of: 5

                   
SI4435DDY-T1-GE3


MOSFET 30V 11.4A 5.0W 24mohm @ 10V
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Vishay 9603
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AUD 0.2206
Multiples of: 5

11.4 A30 V24 mOhmsP - Channel 1 V- 55 C+ 150 C5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel- 10 V50 nCEnhancement Trenchfet
TSM056NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9602
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AUD 0.8585
Multiples of: 1

54 A40 V N - Channel 2.2 V- 55 C+ 150 C34 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V16 nCEnhancement PerFET
IPD050N10N5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 9594
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AUD 1.7869
Multiples of: 1

80 A100 V4.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C150 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V64 nCEnhancement Optimos
IAUC100N08S5N043ATMA1


MOSFET MOSFET_75V 120V
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Infineon 9593
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AUD 1.1626
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           Cut Tape       
YJH03N10A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
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Yangjie 9578
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AUD 0.1444
Multiples of: 5

            Trench Power Mv      
BSZ16DN25NS3 G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon 9575
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AUD 1.403
Multiples of: 1

10.9 A250 V146 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V11.4 nCEnhancement Optimos
Hot IRF3205STRLPBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-263-2 RoHS
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Infineon 9572
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AUD 0.7199
Multiples of: 1

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