MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC3400SDW-13


MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC
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Diodes Incorporated 9700
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AUD 0.0887
Multiples of: 10000

650 mA , - 450 mA30 v , - 30 V200 mOhms , 360 mOhmsN - Channel, P - Channel 800 mV , - 2.6 V- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel+/- 20 v , +/- 20 V1.4 nC , 1.3 nCEnhancement  
DMN2310UT-13


MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 10K
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Diodes Incorporated 9700
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AUD 0.1112
Multiples of: 5

                   
AON7544


PDFN3x3-8 MOSFETs ROHS
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TECH PUBLIC 9700
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AUD 0.1257
Multiples of: 5

                   
DMP3056L-13


MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A
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Diodes Incorporated 9700
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AUD 0.1425
Multiples of: 10000

   P - Channel     Smd/SmtSOT - 23 - 3ReelSi1 Channel     
DMN31D5UFZ-7B


Diodes Incorporated MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
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Diodes Incorporated 9700
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AUD 0.1417
Multiples of: 10000

220 mA30 V4.5 OhmsN - Channel 1 V- 55 C+ 150 C393 mWSmd/SmtX2 - DFN0606 - 3ReelSi1 Channel12 V0.35 nCEnhancement Dmn31
SE6020DB


MOSFET N Trench 60V 20A 2.5V @ 250uA 30 mΩ @ 20A,10V TO-252 RoHS
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SINO-IC 9700
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AUD 0.1494
Multiples of: 5

                   
PMXB75UPEZ


P-Channel 20 V 2.9A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
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Nexperia 9700
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AUD 0.2131
Multiples of: 1

- 2.9 A- 20 V950 mOhmsP - Channel - 400 mV- 55 C+ 150 C1.07 WSmd/SmtDFN1010D - 3ReelSi1 Channel+/- 8 V6.8 nCEnhancement  
NTD3055L104T4G(UMW)


TO-252 MOSFETs ROHS
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Youtai 9700
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AUD 0.2175
Multiples of: 5

                   
BSP149H6906XTSA1


Infineon Technologies MOSFET N-Ch 200V 140mA SOT-223-3
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Infineon 9700
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AUD 0.2357
Multiples of: 1000

140 mA200 V3.5 OhmsN - Channel20 V- 1.4 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V11 nCDepletion  
PMZ390UNEYL


NXP Semiconductors MOSFET 30V N-Channel Trench MOSFET
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Nexperia 0
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AUD 0.1474
Multiples of: 1

900 mA30 V390 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006 - 3ReelSi1 Channel8 V1.3 nCEnhancement  
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