MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
EM6K34T2CR


ROHM Semiconductor MOSFET
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ROHM 17311
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AUD 0.1018
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200 mA50 V2.2 OhmsN - Channel 300 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel4.5 V Enhancement  
DMN1019USN-7


Diodes Incorporated MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
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Diodes Incorporated 9622
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AUD 0.185
Multiples of: 5

9.3 A12 V41 mOhmsN - Channel 0.53 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V27.3 nCEnhancement Dmn1019
ECH8667-TL-H


ON Semiconductor MOSFET PCHNCH 4V DRIVE SERIES
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ON Semiconductor 9562
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AUD 0.5971
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- 5.5 A- 30 V58 mOhmsP - Channel  - 55 C+ 150 C1.5 WSmd/SmtECH - 8ReelSi2 Channel20 V13 nC   
TSM8588CV RGG


MOSFETs -60V, -4.5A, Complementary P-Channel Power MOSFET;60V, 5.7A N-Channel
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Taiwan Semiconductor 9560
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AUD 0.3025
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6.6 A , 8.2 A60 V98 mOhms , 168 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTPDFN33 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V8.6 nC , 9.6 nCEnhancement  
FDC6333C


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 9552
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AUD 0.1429
Multiples of: 5

                   
DMN10H700S-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 9544
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AUD 0.0936
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  700 mOhmsN - Channel     Smd/SmtSOT - 23 - 3Cut TapeSi      
SSM6N55NU,LF


Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
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Toshiba 9531
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AUD 0.1593
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4 A30 V64 mOhmsN - Channel 1.3 v to 2.5 V- 55 C+ 150 C1 WSmd/SmtUDFN - 6ReelSi2 Channel20 V2.5 nC   
ISC0806NLSATMA1


MOSFET TRENCH >=100V
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Infineon 9528
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AUD 2.0444
Multiples of: 1

97 A100 V5.4 mOhmsN - Channel 2.3 V- 55 C+ 150 C96 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V20 nCEnhancement  
ZXMN3B14FTA


N-Channel 30 V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 9526
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AUD 0.3333
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3.5 A30 V140 mOhmsN - channel  - 55 C150 C1 WSmdsmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
Hot IRFR7440TRPBF


MOSFET N Trench 40V 90A 3.9V @ 100uA 2.4 mΩ @ 90A,10V TO-252-2 (DPAK) RoHS
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Infineon 32
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AUD 1.0113
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90 A40 V2.4 mOhmsN - Channel 2.2 v to 3.9 V- 55 C+ 175 C140 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V89 nCEnhancement Strongirfet
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