MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3134KL3A-TP


MOSFET N-Channel Mosfets
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Micro Commercial Components (MCC) 9700
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between Thu. 04 Dec to Tue. 09 Dec
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AUD 0.0401

Multiples of: 10

                   
WPM3027-3/TR


DFN1006-3L MOSFETs ROHS
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Will Semiconductor 9700
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between Thu. 04 Dec to Tue. 09 Dec
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AUD 0.0428

Multiples of: 10

                   
BRCS7002K2ZK


X1-DFN1006-3 MOSFETs ROHS
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Blue Rocket 9700
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between Thu. 04 Dec to Tue. 09 Dec
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AUD 0.0448

Multiples of: 10

                   
SN7002NH6433XTMA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 9700
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between Thu. 20 Nov to Wed. 26 Nov
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AUD 0.0454

Multiples of: 10000

200 mA60 V2.5 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1.5 nCEnhancement  
NVR4003NT3G


MOSFET NFET 30V .56A 1500M
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ON Semiconductor 9700
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between Thu. 20 Nov to Wed. 26 Nov
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AUD 0.0468

Multiples of: 10000

0.5 A30 V1.5 OhmsN - Channel20 V1.4 V- 55 C+ 150 C0.83 WSmd/SmtSOT - 23 - 3Reel   1.15 nC   
DMN65D8LFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
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Diodes Incorporated 9700
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between Thu. 20 Nov to Wed. 26 Nov
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AUD 0.0583

Multiples of: 10000

400 mA60 V3 OhmsN - Channel20 V2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 2ReelSi1 Channel10 V Enhancement  
SSM3J35CTC,L3F(T


Transistor: P-MOSFET; unipolar; -20V; -250mA; 500mW; CST3C
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Toshiba 9700
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between Thu. 20 Nov to Wed. 26 Nov
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AUD 0.0631

Multiples of: 10000

                   
SI3134KU6-TP


MOSFETs N-CHANNEL MOSFET,DFN1010B-6
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Micro Commercial Components (MCC) 9700
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between Wed. 26 Nov to Fri. 28 Nov
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AUD 0.0821

Multiples of: 1

750 mA20 V250 mOhmsN - Channel 1.2 V- 55 C+ 150 C420 mWSMD/SMTDFN - 1010B - 8Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.2 nCEnhancement  
SSM3J16CT,L3F


MOSFET X34 Pb-F CST3 S-MOS (LF) TRANSISTOR Pd 100mW F 1MHz
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Toshiba 9700
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between Wed. 26 Nov to Fri. 28 Nov
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AUD 0.0848

Multiples of: 1

100 mA20 V8 OhmsP - Channel 600 mV-+ 150 C100 mWSMD/SMTCST3 - 3 Si1 Channel- 10 V , + 20 V-Enhancement  
DMN2250UFB-7B


Diodes Incorporated MOSFET N-CH MOSFET 20V
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Diodes Incorporated 9700
Ships to you
between Thu. 20 Nov to Wed. 26 Nov
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AUD 0.0879

Multiples of: 10000

1.35 A20 V250 mOhmsN - Channel 350 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 2ReelSi1 Channel8 V3.1 nCEnhancement  
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