MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRFP4227PBF


MOSFET N Trench 200V 65A 5V @ 250uA 25 mΩ @ 46A,10V TO-247 (AC) RoHS
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Infineon 9700
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AUD 2.0214
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65 A200 V25 mOhmsN - Channel  - 40 C+ 175 C330 WThrough HoleTO - 247ACTubeSi1 Channel30 V70 nCEnhancement  
DMHC4035LSD-13


Diodes Incorporated MOSFET 30V Comp H-Bridge ENH FET 20VGS
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Diodes Incorporated 9642
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AUD 0.6157
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- 2.9 A , 4 A- 40 v , 40 V58 mOhms , 100 mOhmsN - Channel, P - Channel - 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Reel-4 Channel+/- 20 V11.1 nC , 12.5 nCEnhancement  
DMP213DUFA-7B


Diodes Incorporated MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss
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Diodes Incorporated 9641
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AUD 0.0772
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166 mA25 V10 Ohmsp - channel - 0.9 V- 55 C+ 150 C360 mWsmd/smtX2 - DFN0806 - 3Reelsi1 channel+/- 8 V0.35 nCenhancement  
TSM070NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9636
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AUD 0.6646
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54 A40 V N - Channel 2.2 V- 55 C+ 150 C36 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V24 nCEnhancement PerFET
IRFR120TRLPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 9636
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AUD 1.1003
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
NTR4171PT1G


P-Channel 30 V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 9632
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AUD 0.1558
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3.5 A30 V75 mOhmsP - Channel 700 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V15.6 nCEnhancement  
FDD86113LZ


MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET
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ON Semiconductor 9617
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AUD 0.8952
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4.2 A100 V104 mOhmsN - Channel  - 55 C+ 150 C3.1 WSmd/SmtTO - 252 (DPAK)ReelSi1 Channel    Powertrench
MCG013N10YL-TP


MOSFETs N-CHANNEL MOSFET,DFN3333
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Micro Commercial Components (MCC) 9615
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AUD 0.5657
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45 A100 V13 mOhmsN - Channel 3 V- 55 C+ 150 C46 WSMD/SMTDFN3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
SE40P20B


MOSFET P Trench 40V 20A 3V @ 250uA 32 mΩ @ 5A,10V TO-252 RoHS
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SINO-IC 9612
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AUD 0.1506
Multiples of: 5

                   
MCAC017P08Y-TP


MOSFETs P-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 9608
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AUD 1.0179
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50 A80 V17 mOhmsP - Channel 3 V- 55 C+ 150 C104 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 18 V , + 18 V93 nCEnhancement  
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