MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD45P4LLF6AG


STMicroelectronics MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 9700
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AUD 1.0502
Multiples of: 2500

50 A40 V15 mOhmsP - Channel 1 V- 55 C+ 150 C58 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel- 10 V65.5 nCEnhancementAec - Q101Stripfet
BSC900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
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Infineon 9700
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AUD 1.1131
Multiples of: 5000

            Optimos 3      
IPD100N04S402ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon 9700
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AUD 1.3327
Multiples of: 2500

   N Channel      TO - 252 - 3Reel       
BSC010N04LS6ATMA1


MOSFET TRENCH <= 40V
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Infineon 9700
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AUD 0.6804
Multiples of: 5000

100 A40 V1 mOhmsN - Channel 1.3 V- 55 C+ 175 C150 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V67 nCEnhancement  
MCACLD85N04YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 9700
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AUD 1.4213
Multiples of: 1

300 A40 V850 uOhmsN - Channel 2.5 V- 55 C+ 175 C136 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V101 nCEnhancement  
BSC030N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
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Infineon 9700
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AUD 1.4504
Multiples of: 1

            Optimos 5      
BSC190N15NS3GATMA1


MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
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Infineon 9700
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AUD 1.5724
Multiples of: 5000

           Reel      Optimos
SI4465ADY-T1-GE3


Vishay Semiconductors MOSFET 8.0V 13.7A 3.0W 9.0mohm 4.5V
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Vishay 9700
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AUD 1.62
Multiples of: 2500

20 A- 8 V9 mOhmsP - Channel8 V - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi   Enhancement Trenchfet
STS10N3LH5


STMicroelectronics MOSFET N-channel 30 V 10 A SO-8 STripFET
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STMicroelectronics 9700
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AUD 1.8787
Multiples of: 2500

10 A30 V19 mOhmsn - channel     smd/smtSOIC - 8Reel       
FDS2672


Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8
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ON Semiconductor 9700
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AUD 2.2817
Multiples of: 2500

            Ultrafet®      
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