MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4468(UMW)


SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai 18197
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AUD 0.05
Multiples of: 10

                   
BXS1150N10M


Transistor: N-MOSFET
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Bridgelux 9243
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AUD 0.1194
Multiples of: 1

                   
SQ4920EY-T1_BE3


MOSFET Dual N-CHANNEL 30 V
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Vishay 9241
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AUD 1.3538
Multiples of: 1

8 A30 V13 mOhmsN - Channel 2.5 V- 55 C+ 175 C4.4 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi2 Channel- 20 V , + 20 V30 nCEnhancement TrenchFET
DMP32D4S-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA
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Diodes Incorporated 9226
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AUD 0.121
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300 mA- 30 V2.4 OhmsP - Channel - 2.4 V- 55 C+ 150 C540 mWSmd/SmtSOT23Reel- +/- 20 V1.2 nCEnhancement  
IPP083N10N5AKSA1


Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
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Infineon 9215
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AUD 1.3609
Multiples of: 1

            Optimos 5      
SUD50P06-15L-T4-E3


MOSFET P-Channel 60-V D-S
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Vishay 9210
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AUD 2.4095
Multiples of: 1

50 A60 V15 mOhmsP - Channel 3 V- 55 C+ 175 C136 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V110 nCEnhancement TrenchFET
BUK7635-55A,118


NXP Semiconductors MOSFET TAPE13 PWR-MOS
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Nexperia 7693
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AUD 1.8797
Multiples of: 1

35 A55 V35 mOhmsn - channel  - 55 C+ 175 C85 Wsmd/smtSOT - 404 - 3Reelsi1 channel20 V enhancement  
SI2333DS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 7405
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AUD 0.1181
Multiples of: 5

                   
2N7002PS,115


Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
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Nexperia 3068
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AUD 0.0629
Multiples of: 1

320 mA60 V1 OhmsN - Channel  - 55 C150 C280 mWSmdsmtSOT - 363 - 6ReelSi2 Channel20 V600 pCEnhancement  
BSS84


null 130mA 225mW 4.5@4.5V,0.15A 800mV@250uA SOT-23 MOSFETs ROHS
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Siliup 388
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AUD 0.0135
Multiples of: 50

                   
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