MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2990UFZ-7B


Diodes Incorporated MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 9326
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AUD 0.0685
Multiples of: 5

250 mA20 V990 mOhmsN - Channel 1 V- 55 C+ 150 C320 mWSmd/SmtX2 - DFN0606 - 3Reel- +/- 8 V1 nCEnhancement  
BSP129 H6906


MOSFET N-Ch 240V 50mA SOT-223-3
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Infineon 9326
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AUD 0.7625
Multiples of: 1

350 mA240 V4.2 Ohmsn - channel 2.1 V- 55 C+ 150 C1.8 Wsmd/smtSOT - 223 - 4Reelsi1 channel20 V5.7 nCdepletion  
BSC0902NSI


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
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Infineon 9312
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AUD 0.4285
Multiples of: 1

100 A30 V2.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V   Optimos
IRF1404ZSTRLPBF


Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
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Infineon 9312
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AUD 1.1543
Multiples of: 800

190 A40 V2.7 mOhmsN - Channel    220 WSmd/SmtD2PAKReelSi1 Channel20 V100 nC   
TSM110NB04LCR RLG


MOSFET 40V 54A Single N-Chan Pwr MOSFET
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Taiwan Semiconductor 9295
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AUD 0.4706
Multiples of: 1

           Cut Tape       
IRF1404PBF


Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
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Infineon 9293
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AUD 0.6796
Multiples of: 1

            Hexfet®      
FDZ451PZ


Fairchild Semiconductor MOSFET -20V P-Ch 1.5 V PowerTrench MOSFET
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ON Semiconductor 9283
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AUD 0.1041
Multiples of: 6411

 - 20 V P - Channel     Smd/SmtWLCSP - 4ReelSi 1.5 V    
BSC011N03LSI


Infineon Technologies MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
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Infineon 9283
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AUD 0.8751
Multiples of: 1

100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8-Si1 Channel10 V68 nCEnhancement Optimos
STP11NM80


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 9215
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AUD 3.9972
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IPD60R180P7SAUMA1


null 18A 72W 180mO@5.6A,10V null TO-252-3 MOSFETs ROHS
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Infineon 1783
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AUD 1.239
Multiples of: 1

18 A600 V145 mOhmsN - Channel 3 V- 40 C+ 150 C72 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V25 nCEnhancement Coolmos
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