MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPM04K20BX


20V 500mA 8V 1PCSPChannel DFN1006-3L MOSFETs ROHS
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Shenzhen JingYang 9137
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AUD 0.0272
Multiples of: 20

                   
IPP80N08S207AKSA1


Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO220-3
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Infineon 9118
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AUD 4.1741
Multiples of: 1

            optimos      
IPB180N04S4-01


MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
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Infineon 9104
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AUD 2.1015
Multiples of: 1

180 A40 V1.3 mOhmsN - Channel  - 55 C+ 175 C188 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V135 nC Aec - Q101Optimos
BSC080P03LSGAUMA1


MOSFET SMALL SIGNALP-CH
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Infineon 9101
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AUD 1.803
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           Reel       
TSM8568CV RGG


MOSFETs -30V, -4.5A, Complementary P-Channel Power MOSFET;30V, 5.7A N-Channel
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Taiwan Semiconductor 9096
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AUD 0.3913
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4.5 A , 5.7 A30 V17 mOhms , 33 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C4.2 WSMD/SMTPDFN33 - 8Reel , Cut TapeSi2 Channel- 20 V , + 25 V16 nC , 21 nCEnhancement  
IPD50N06S4L08ATMA2


60V 50A 7.8mO@50A,10V 71W N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 9066
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AUD 0.6708
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50 A60 V7.8 mOhmsN - Channel 1.7 V- 55 C+ 175 C71 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 16 V , 16 V64 nCEnhancementAEC - Q101OptiMOS
BSS123


100V 0.29A 350mW 2.7@10V 1V@250uA SOT-23 MOSFETs ROHS
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ElecSuper 9021
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AUD 0.0131
Multiples of: 50

                   
BSC028N06NSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 8538
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AUD 1.4455
Multiples of: 1

100 A60 V2.8 mOhmsN - Channel 2.1 V- 55 C+ 150 C83 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V37 nCEnhancement  
CJAB55P03A


30V 55A 6.5mΩ@10V 2.5V P Channel PDFNWB3.3x3.3-8L MOSFETs ROHS
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Changjing Electronics Technology 7439
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AUD 0.2224
Multiples of: 5

                   
FDB0170N607L


MOSFET 60V TO263 7L JEDEC GREEN EMC
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ON Semiconductor 203
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AUD 3.6532
Multiples of: 1

300 A60 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V173 nCEnhancement  
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