MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SN7002W H6433


MOSFET SMALL SIGNAL MOSFETS
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Infineon 9690
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AUD 0.1126
Multiples of: 5

                   
DMN6040SVTQ-13


MOSFET 60V Dual N-Ch FET 44mOhm 10V 5.0A
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Diodes Incorporated 9690
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AUD 0.3827
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   N - Channel     Smd/SmtTSOT - 26 - 6Cut TapeSi1 Channel   Aec - Q101 
MCAC012N15YH-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 9690
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AUD 0.9586
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70 A150 V11.8 mOhmsN - Channel 4 V- 55 C+ 150 C125 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement  
MCGL2D1N03YL-TP


MOSFETs N-CHANNEL MOSFET,PDFN3333-B
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Micro Commercial Components (MCC) 9685
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AUD 0.4679
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100 A30 V4.5 mOhmsN - Channel 1.7 V- 55 C+ 175 C50 WSMD/SMTPDFN3333 - BReel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
IRFR310TRPBF-BE3


MOSFET 400V N-CH
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Vishay 9680
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AUD 0.7192
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1.7 A400 V3.6 OhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V12 nCEnhancement  
BSC046N02KSGAUMA1


Transistor: N-MOSFET; unipolar; 20V; 60A; 48W; PG-TDSON-8
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Infineon 9680
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AUD 0.9032
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            Optimos 2      
NCEP0178AK


MOSFET N Trench 100V 78A (Tc) 2.2V @ 250uA 8.5 mΩ @ 39A,10V TO-252-2 (DPAK) RoHS
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NCE Power 9677
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AUD 0.5387
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BSC098N10NS5ATMA1


Infineon Technologies MOSFET Pwr transistor 100V OptiMOS 5
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Infineon 9677
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AUD 0.8678
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60 A100 V14 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel+/- 20 V22 nCEnhancement Optimos
BSZ014NE2LS5IFATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 9676
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AUD 1.1681
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            Optimos 5      
DMN63D1LT-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 9675
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AUD 0.225
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320 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C330 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel20 V392 pCEnhancement  
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