MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC027N06LS5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 13098
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AUD 1.4684
Multiples of: 1

100 A60 V2.3 mOhmsN - Channel 1.1 V- 55 C+ 150 C83 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V30 nCEnhancement Optimos 5
IPB60R250CPATMA1


Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
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Infineon 9700
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AUD 2.6786
Multiples of: 1

           Tape And Reel    enhancement  
STP42N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 9700
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AUD 5.4524
Multiples of: 1000

34 A600 V87 mOhmsN - Channel 2 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3 Si1 Channel25 V55 nCEnhancement Mdmesh
TSM056NH04CV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9698
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AUD 0.8585
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54 A40 V N - Channel 3.6 V- 55 C+ 150 C34 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement PerFET
BSC014NE2LSI


Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 9697
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AUD 1.1244
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100 A25 V1.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtTDSON - 8-Si1 Channel20 V52 nCEnhancementAec - Q101Optimos
ISC046N13NM6ATMA1


MOSFETs N
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Infineon 9697
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AUD 3.3175
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142 A135 V4.6 mOhmsN - Channel 3.5 V- 55 C+ 175 C211 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V65 nCEnhancement  
MCAC6D5N10YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 9694
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AUD 0.6548
Multiples of: 1

74 A100 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C104 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
DMP22D6UFB4Q-7B


MOSFETs MOSFET BVDSS: 8V~24V X2-DFN1006-3 T and R 10K
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Diodes Incorporated 9690
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AUD 0.0611
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           Reel , Cut TapeSi      
IRFP260NPBF


MOSFET N Trench 200V 50A 4V @ 250uA 40 mΩ @ 28A,10V TO-247 (AC) RoHS
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Infineon 7846
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AUD 0.8657
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
FDBL0260N100


MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 7760
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AUD 5.5254
Multiples of: 2000

200 A100 V2.6 mOhmsn - channel 2 V- 55 C+ 150 C250 Wsmd/smtMO - 299A - 8Reelsi1 channel+/- 20 V83 nCenhancement powertrench
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