MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX7002BKMBYL


NXP Semiconductors MOSFET
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Nexperia 16009
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AUD 0.1523
Multiples of: 5

350 mA60 V2.8 OhmsN - Channel 1.1 V- 55 C+ 150 C680 mWSmd/SmtDFN1006B - 3ReelSi1 Channel10 V1 nCEnhancement  
TPH1R005PL,L1Q


N-Channel 45 V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba 9207
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AUD 1.3224
Multiples of: 1

150 A45 V1.7 mOhmsN - Channel 1.4 V- 55 C+ 175 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V99 nCEnhancement U - MOSIX - H
TPH1100CQ5,LQ


MOSFETs 150V UMOS10-H SOP Advance(N) 11.1mohm
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Toshiba 9192
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AUD 1.5054
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90 A150 V11.1 mOhmsN - Channel 4.5 V + 175 C180 WSMD/SMTSOP - 8 Si2 Channel- 20 V , + 20 V38 nCEnhancement  
DMN65D8LFB


60V 300mA 350mW 2.2@10V,0.3A 2.5V@0.2A DFN-3L(1x0.6) MOSFETs ROHS
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TECH PUBLIC 9156
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AUD 0.0284
Multiples of: 20

                   
SI7114DN-T1-E3


MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
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Vishay 9136
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AUD 1.5054
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
SUD23N06-31L-T4-E3


MOSFET N-CH 60-V (D-S) 175C Logic Level
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Vishay 9067
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AUD 0.6288
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9.1 A60 V31 mOhmsN - Channel  - 55 C+ 175 C5.7 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V   Trenchfet
WNM2077-3/TR


MOSFET N Trench 20V 510mA 1V @ 250uA 600 mΩ @ 350mA,4.5V SOT-723 RoHS
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Will Semiconductor 9021
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AUD 0.0523
Multiples of: 20

                   
NCE3400AY


30V 5.8A 27mO@10V,5.8A 1.4W N Channel SOT-23-3L MOSFETs ROHS
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NCE Power 7532
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AUD 0.0887
Multiples of: 5

                   
DMP22D3UFZ-7B


MOSFETs MOSFET BVDSS: 8V 24V X2-DFN0606-3 T&R 10K
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Diodes Incorporated 4583
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AUD 0.0471
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           Reel , Cut Tape       
AON1606


Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3
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Alpha & Omega 1959
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AUD 0.0667
Multiples of: 10

                   
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