MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC0702LS


Infineon TRENCH 40<-<100V
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Infineon 9439
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AUD 1.8501
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TPH7R506NH,L1Q(M


Trans MOSFET N-CH Si 60V 55A 8-Pin SOP Advance T/R
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Toshiba 9333
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AUD 1.8644
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SSM3J356R,LF(T


SOT-23F MOSFETs ROHS
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Toshiba 9331
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AUD 0.1086
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ASDM30P100KQ-R


30V 100A 109W 5mΩ@10V,30A 1.5V@250uA 700pF@15V P Channel 6560pF@15V 30nC@10V -55℃~+175℃@(Tj) TO-252 MOSFETs ROHS
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Ascend 9331
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AUD 0.2841
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PSMN045-80YS,115


MOSFET N-CHAN 80V 17A
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Nexperia 9325
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AUD 0.3441
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24 A80 V45 mOhmsN - Channel 2 V- 55 C+ 175 C56 WSmd/SmtLFPAKReelSi1 Channel10 V12.5 nCEnhancement  
IRFB4310ZPBF


MOSFET N Trench 100V 120A 4V @ 150uA 6 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 9312
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AUD 1.0727
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127 A100 V4.8 mOhmsN - Channel    250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
IRF6795MTRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
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Infineon 9312
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AUD 1.727
Multiples of: 4800

160 A25 V2.4 mOhmsN - Channel20 V1.8 V- 40 C+ 150 C2.8 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V35 nC  Directfet
NVTFS5116PL-MS


60V 20A 85mΩ@10V 2.5V P Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 9292
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AUD 0.2503
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WPM3401-3/TR


MOSFET SOT-23-3L RoHS
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Will Semiconductor 8599
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AUD 0.0854
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PSMN8R2-80YS,115


MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
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Nexperia 4985
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AUD 0.9193
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82 A80 V13.4 mOhmsN - Channel 1 V- 55 C+ 175 C130 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel10 V55 nCEnhancement  
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