MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIZF5302DT-T1-RE3


MOSFET P-CHANNEL 30 V MOSFET PWRPAK
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Vishay 10016
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AUD 1.5215
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100 A30 V3.2 mOhmsN - Channel 2 V- 55 C+ 150 C48.1 WSMD/SMTPowerpair 3 x 3FS - 12BulkSi2 Channel- 12 V , + 16 V6.7 nCEnhancement  
FDPF320N06L


MOSFET 60V NCHAN PwrTrench
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ON Semiconductor 10012
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AUD 1.6343
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21 A60 V20 mOhmsN - Channel  - 55 C+ 175 C26 WThrough HoleTO - 220FTubeSi     Powertrench
ISC0603NLSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 10006
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AUD 1.0214
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56 A80 V8.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C52 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V9.2 nCEnhancement  
RQ5C030TPTL


MOSFET PCH -20V -3A SMALL SIGNAL
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ROHM 10002
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AUD 0.3362
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3 A20 V75 mOhmsP - Channel 700 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V9.3 nCEnhancement  
SI2310


60V 3A N Channel SOT-23 MOSFETs ROHS
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Hottech 9960
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AUD 0.0349
Multiples of: 10

                   
35N06


TO-252 MOSFETs ROHS
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Youtai 9952
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AUD 0.1483
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IRFZ34PBF


N-Channel 60 V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 9950
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AUD 1.3829
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30 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V46 nCEnhancement  
IRFP460PBF


N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC
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Vishay 9949
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AUD 2.2605
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20 A500 V270 mOhmsN - Channel 2 V- 55 C+ 150 C280 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V210 nCEnhancement  
IRF7341TRPBF


MOSFET 2 N Channel (Dual) 55V 4.7A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon 9937
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AUD 0.2537
Multiples of: 5

4.7 A55 V56 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
DMN10H220L-7


Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
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Diodes Incorporated 9811
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AUD 0.1241
Multiples of: 5

1.6 A100 V220 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel- +/- 16 V8.3 nCEnhancement  
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