MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJM3400NSA


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 41 mΩ @ 5.8A,10V SOT-23 RoHS
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Pingjingsemi 10274
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AUD 0.0397
Multiples of: 10

                   
SI4431CDY-T1-E3


Vishay Semiconductors MOSFET 30V 9.0A 4.2W 32mohm 10V
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Vishay 10257
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AUD 0.5605
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7 A- 30 V32 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi 20 V Enhancement Trenchfet
ZVN2106A


MOSFET Transistor - N Channel - 450 mA - 60 V - 2 ohm - 10 V - 2.4 V.
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Diodes Incorporated 10240
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AUD 0.4121
Multiples of: 1

450 mA60 V2 OhmsN - Channel 800 mV- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
WSP4984


MOSFET 2 N Channel (Dual) 40V 10A (Tc) 2.7V @ 250uA 20 mΩ @ 6.6A,10V SOP-8_150mil RoHS
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Winsok 10235
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AUD 0.2616
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PSMN4R0-30YLDX


MOSFET MOSFET N-CH 30V LFPAK
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Nexperia 10227
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AUD 0.4051
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95 A30 V4 mOhmsN - Channel20 V1.74 V- 55 C+ 175 C64 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V9.1 nCEnhancement  
AO3400


30V 5.8A 28mO@10V,2.9A 1.4W N Channel SOT-23 MOSFETs ROHS
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LGE 10223
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AUD 0.0386
Multiples of: 10

                   
DMTH6016LFDFW-7


MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
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Diodes Incorporated 10221
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AUD 0.4271
Multiples of: 1

9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancement  
BSS214NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 10197
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AUD 0.0803
Multiples of: 1

1.5 A20 V140 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel4.5 V800 pCEnhancementAec - Q101 
NVS4409NT1G


ON Semiconductor MOSFET
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ON Semiconductor 10191
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AUD 0.1048
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700 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3Tape And ReelSi1 Channel4.5 V1.2 nCEnhancementAec - Q101 
IPS70R1K4CEAKMA1


700V 5.4A 53W 1.4O@1A,10V N Channel TO-251-3-11 MOSFETs ROHS
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Infineon 10185
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AUD 0.5456
Multiples of: 1

 700 V        TO - 251 - 3Tubesi     coolmos
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