MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot ZXMC3AMCTA


MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS
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Diodes Incorporated 9948
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AUD 0.6548
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3.7 A , 2.7 A30 V100 mOhms , 280 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtDFN3020 - B - 8Cut TapeSi2 Channel20 V3.9 nC , 6.4 nCEnhancement  
SI2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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Hottech 9935
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AUD 0.0303
Multiples of: 20

                   
IPN70R360P7SAUMA1


MOSFET
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Infineon 9935
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AUD 0.6279
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12.5 A700 V360 mOhmsN - Channel 3.5 V- 40 C+ 150 C7.2 WSMD/SMTSOT - 223 - 3Cut Tape , ReelSi1 Channel- 16 V , + 16 V16.4 nCEnhancement  
IXTY26P10T


MOSFET TrenchP Power MOSFET
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IXYS 9926
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AUD 3.719
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26 A100 V90 mOhmsP - Channel 4.5 V- 55 C+ 150 C150 WSmd/SmtTO - 252 - 3TubeSi 15 V52 nCEnhancement Trenchp
BSC520N15NS3GATMA1


Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
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Infineon 9922
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AUD 0.9764
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            Optimos 3      
IPD530N15N3GATMA1


MOSFET MV POWER MOS
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Infineon 9913
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AUD 0.8748
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21 A150 V44 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V12 nCEnhancement Optimos
APM4953


30V 5.3A 2.6W 49mΩ@10V 3V 2 P-Channel SOP-8 MOSFETs ROHS
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HXY MOS 9911
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AUD 0.0837
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2N7002KDW


MOSFET N Trench 60V 115mA 2.5V @ 250uA 3 Ω @ 500mA,10V SC-70-6 (SOT-363) RoHS
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Panjit 9901
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AUD 0.0388
Multiples of: 10

                   
IRLU3410PBF


Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
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Infineon 9897
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AUD 0.6775
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   N - Channel     Through HoleIPAKTube       
BSS606NH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
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Infineon 9890
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AUD 0.2392
Multiples of: 1

            Optimos 3      
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