MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN10H170SFG-13


MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
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Diodes Incorporated 9872
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AUD 0.2968
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8.5 A100 V99 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V14.9 nCEnhancement  
IPP042N03L G


Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3
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Infineon 9852
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AUD 0.9743
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70 A30 V4.2 mOhmsN - Channel20 V1 V- 55 C+ 175 C79 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V18 nCEnhancement Optimos
IAUS300N10S5N015TATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 9847
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AUD 5.3197
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300 A100 V1.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V166 nCEnhancement  
HY1904C2


MOSFET N Trench 40V 65A (Tc) 3V @ 250uA 6 mΩ @ 20A,10V PPAK5*6-8L RoHS
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HuaYi 9835
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AUD 0.2262
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SIS412DN-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
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Vishay 9830
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AUD 0.1826
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12 A30 V24 mOhmsN - Channel 1 V- 55 C+ 150 C10 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel10 V8 nCEnhancement Trenchfet, Powerpak
TK2P90E,RQS


MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A
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Toshiba 9827
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AUD 0.4013
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2 A900 V4.7 OhmsN - Channel 2.5 V-+ 150 C80 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V12 nCEnhancement Dtmosiv
SI7212DN-T1-E3


Vishay Semiconductors MOSFET DUAL N-CH 30V (D-S) FAST SWITCHING
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Vishay 9818
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AUD 1.2222
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4.9 A30 V36 mOhmsN - Channel  - 55 C+ 150 C1.3 WSmd/SmtPOWERPAK - 1212 - 8Reel 2 Channel12 V Enhancement  
IRLR3410TRPBF


MOSFET N Trench 100V 17A (Tc) 2V @ 250uA 105 mΩ @ 10A,10V DPAK RoHS
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Infineon 9399
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AUD 0.3148
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15 A100 V155 mOhmsN - Channel  - 55 C+ 175 C52 WSmd/SmtDPAKReelSi1 Channel16 V22.7 nCEnhancement  
2SK3018-TP


MOSFET N-Channel MOSFET, SOT-323 package
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Micro Commercial Components (MCC) 8892
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AUD 0.0821
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           Cut TapeSi      
SI4134DY-T1-GE3


MOSFET 30V Vds 20V Vgs SO-8
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Vishay 6115
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AUD 0.1821
Multiples of: 5

         Smd/SmtSO - 8Cut TapeSi     Trenchfet
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