MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJBB3139K


MOSFET P Channel 20V 660mA 1.1V @ 250uA 520mO @ 1A,4.5V DFN1006-3L-A RoHS
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Changjing Electronics Technology 9670
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AUD 0.0371
Multiples of: 10

                   
DMP22D6UFB4Q-7B


MOSFETs MOSFET BVDSS: 8V~24V X2-DFN1006-3 T and R 10K
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Diodes Incorporated 9667
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AUD 0.0566
Multiples of: 1

           Reel , Cut TapeSi      
IQDH45N04LM6CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 9652
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AUD 3.0486
Multiples of: 1

611 A40 V490 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement OptiMOS
TSM280NB06LCR RLG


MOSFET 60V 28A 28mOhm N-Chan Pwr MOSFET
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Taiwan Semiconductor 9649
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AUD 0.4363
Multiples of: 1

28 A60 V28 mOhmsN - Channel 1 V- 55 C+ 175 C56 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel20 V18 nCEnhancement  
PMXB120EPEZ


NXP Semiconductors 30 V, P-channel Trench MOSFET
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Nexperia 9647
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AUD 0.6534
Multiples of: 1

2.4 A30 V100 mOhmsP - Channel 2.5 V- 55 C+ 150 C8.33 WSmd/SmtDFN1010D - 3ReelSi1 Channel20 V11 nCEnhancement  
CJ1012


SOT-523 MOSFETs ROHS
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Changjing Electronics Technology 9641
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AUD 0.0413
Multiples of: 20

                   
DMP213DUFA-7B


Diodes Incorporated MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss
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Diodes Incorporated 9641
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AUD 0.0985
Multiples of: 1

166 mA25 V10 Ohmsp - channel - 0.9 V- 55 C+ 150 C360 mWsmd/smtX2 - DFN0806 - 3Reelsi1 channel+/- 8 V0.35 nCenhancement  
NCE4614


MOSFET N & P Trench 40V 8A (Tc),7A (Tc) 2V @ 250uA 19 mΩ @ 8A,10V;35 mΩ @ 8A,10V SOIC-8_150mil RoHS
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NCE Power 9636
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AUD 0.1999
Multiples of: 5

                   
NCE6045XG


DFN-8(5x6) MOSFETs ROHS
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NCE Power 9636
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AUD 0.3603
Multiples of: 5

                   
SL2310


MOSFET N Trench 60V 3A 2V @ 250uA 105 mΩ @ 3A,10V SOT-23 RoHS
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SLKORMICRO 5946
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AUD 0.0629
Multiples of: 10

                   
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