MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFL4310TRPBF


MOSFET N Trench 100V 1.6A 4V @ 250uA 200 mΩ @ 1.6A,10V SOT-223 RoHS
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Infineon 65475
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AUD 0.3246
Multiples of: 2500

1.6 A100 V200 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel20 V17 nC   
DMN3190LDW-13


Diodes Incorporated MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
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Diodes Incorporated 9700
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AUD 0.1125
Multiples of: 10000

1 A30 V190 mOhmsN - Channel 2.8 V- 55 C+ 150 C320 mWSmd/SmtSOT363Reel-2 Channel+/- 20 V2 nCEnhancement  
DMC31D5UDJ-7


MOSFET 30V N & P Enh FET Low RDSon 22.2pF
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Diodes Incorporated 9700
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AUD 0.2035
Multiples of: 10000

220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN And P - Channel12 V1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
1080116


MOSFET HIGH POWER_NEW
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Phoenix Contact 9700
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AUD 0.4334
Multiples of: 50

                   
FQD5P20TM


Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
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ON Semiconductor 9700
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AUD 0.5392
Multiples of: 2500

            Qfet®      
STS8DN3LLH5


MOSFET Dual N-Ch 30V 10A STripFET V Pwr
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STMicroelectronics 9700
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AUD 0.6159
Multiples of: 2500

10 A30 V15.5 mOhmsn - channel 1 V  2.7 Wsmd/smtSOIC - 8Reelsi2 channel22 V5.4 nC  stripfet
STP45NF06


Transistor: N-MOSFET; unipolar; 60V; 26A; 80W; TO220-3
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STMicroelectronics 3992
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AUD 0.5535
Multiples of: 1

                   
BSC0902NSIATMA1


Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
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Infineon 2386
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AUD 0.4907
Multiples of: 1

   N Channel               
DMP22D4UFA-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K
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Diodes Incorporated 926
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AUD 0.0861
Multiples of: 5

330 mA20 V5 OhmsP - Channel - 1 V- 55 C+ 150 C400 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.4 nCEnhancement  
DMP4051LK3-13


MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL
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Diodes Incorporated 456
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AUD 0.4263
Multiples of: 1

10.5 A40 V51 mOhmsP - Channel 1 V- 55 C+ 150 C8.9 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V14 nCEnhancement  
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