MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
S8205A


MOSFET 2 N Channel (Dual) 20V 5A (Tj) 1V @ 250uA 25 mΩ @ 5A,4V SOT-23-6 RoHS
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Hottech 20579
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AUD 0.0422
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DMN3059LCA3-7


MOSFETs MOSFET BVDSS: 25V-30V X4-DSN1006-3 T&R 10K
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Diodes Incorporated 9425
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AUD 0.121
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           Reel , Cut Tape       
AP4812S


SOP-8 MOSFETs ROHS
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Quan Li 9423
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AUD 0.1267
Multiples of: 5

                   
FQB19N20TM


Fairchild Semiconductor MOSFET 200V N-Ch QFET Logic Level
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ON Semiconductor 9399
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AUD 1.7286
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19.4 A200 V150 mOhmsN - Channel30 V - 55 C+ 150 C3.13 WSmd/SmtD2PAK - 3ReelSi1 Channel30 V Enhancement  
DMN10H170SFG-13


MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
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Diodes Incorporated 9395
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AUD 0.2986
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8.5 A100 V99 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSMD/SMTPowerdi3333 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V14.9 nCEnhancement  
IRFP4110PBF


Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
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Infineon 9392
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AUD 2.0981
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180 A100 V3.7 mOhmsN - Channel    370 WThrough HoleTO - 247ACTubeSi1 Channel20 V150 nC   
CJAB25P03


MOSFET P Channel 30V 25A 3V @ 250uA 20mO @ 10A,10V PDFNWB3.3x3.3-8L RoHS
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Changjing Electronics Technology 9379
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AUD 0.1919
Multiples of: 5

                   
NX7002BKMYL


N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount SOT-883
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Nexperia 9282
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AUD 0.1917
Multiples of: 5

350 mA60 V2.2 OhmsN - Channel 1.1 V- 55 C+ 150 C680 mWSmd/SmtDFN1006 - 3ReelSi1 Channel20 V1 nCEnhancement  
BSS138L


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 9263
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AUD 0.0147
Multiples of: 10

                   
SQS411ENW-T1_GE3


MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W
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Vishay 251
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AUD 0.5759
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16 A40 V27.3 mOhmsP - Channel 1.5 V- 55 C+ 175 C53.6 WSmd/SmtPOWERPAK - 1212 - 8WCut TapeSi1 Channel20 V50 nCEnhancement  
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