MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
EM6K33T2R


ROHM Semiconductor MOSFET
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ROHM 10864
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AUD 0.1764
Multiples of: 1

200 mA50 V1.6 OhmsN - Channel 300 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel8 V Enhancement  
SIR4409DP-T1-RE3


MOSFETs POWRPK P CHAN 40V
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Vishay 9715
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AUD 0.8313
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60.6 A40 V9 mOhmsP - Channel 2.3 V- 55 C+ 150 C59.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V38.1 nCEnhancement  
2SJ633-TL-E


Trans MOSFET P-CH Si 60V 4A
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ON Semiconductor 9707
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AUD 0.8175
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                enhancement  
SP2004KNCT


PDFN1006-3B MOSFETs ROHS
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Siliup 9700
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AUD 0.0123
Multiples of: 50

                   
DMN1260UFA-7B


Diodes Incorporated MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC
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Diodes Incorporated 9700
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AUD 0.0857
Multiples of: 10000

200 mA12 V366 mOhmsN - Channel 1 V- 55 C+ 150 C0.36 WSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.96 nCEnhancement  
BSG0811NDATMA1


Transistor: N-MOSFET; unipolar; 25V; 31A; 6.25W; PG-TISON-8-4
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Infineon 9690
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AUD 1.4614
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            Optimos 5      
IRFP27N60KPBF


N-Channel 600 V 27A (Tc) 500W (Tc) Through Hole TO-247AC
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Vishay 9409
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AUD 4.342
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27 A600 V220 mOhmsN - Channel 3 V- 55 C+ 150 C500 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V180 nCEnhancement  
DMP32D9UFZ-7B


Diodes Incorporated MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A
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Diodes Incorporated 9244
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AUD 0.1456
Multiples of: 1

- 200 mA- 30 V10 OhmsP - Channel10 V- 1 V- 55 C+ 150 C390 mWSmd/SmtX2 - DFN0606 - 3ReelSi1 Channel10 V0.35 nCEnhancement Dmp32
SN7002NH6433XTMA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 4818
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AUD 0.0542
Multiples of: 1

200 mA60 V2.5 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1.5 nCEnhancement  
SSM3K72KCT,L3F


MOSFET Small-signal Nch MOSFET
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Toshiba 0
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AUD 0.0462
Multiples of: 10000

400 mA60 V1.05 OhmsN - Channel 1.1 V + 150 C500 mW (1/2 w)Smd/SmtCST3 - 3Cut TapeSi1 Channel20 V600 pCEnhancement U - Mosvii - H
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