MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3134KU6-TP


MOSFETs N-CHANNEL MOSFET,DFN1010B-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 9700
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AUD 0.0821
Multiples of: 1

750 mA20 V250 mOhmsN - Channel 1.2 V- 55 C+ 150 C420 mWSMD/SMTDFN - 1010B - 8Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.2 nCEnhancement  
SSM3J16CT,L3F


MOSFET X34 Pb-F CST3 S-MOS (LF) TRANSISTOR Pd 100mW F 1MHz
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Toshiba 9700
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AUD 0.0848
Multiples of: 1

100 mA20 V8 OhmsP - Channel 600 mV-+ 150 C100 mWSMD/SMTCST3 - 3 Si1 Channel- 10 V , + 20 V-Enhancement  
DMC3400SDW-13


MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC
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Diodes Incorporated 9700
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AUD 0.0864
Multiples of: 10000

650 mA , - 450 mA30 v , - 30 V200 mOhms , 360 mOhmsN - Channel, P - Channel 800 mV , - 2.6 V- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel+/- 20 v , +/- 20 V1.4 nC , 1.3 nCEnhancement  
DMN2250UFB-7B


Diodes Incorporated MOSFET N-CH MOSFET 20V
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Diodes Incorporated 9700
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AUD 0.0901
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1.35 A20 V250 mOhmsN - Channel 350 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 2ReelSi1 Channel8 V3.1 nCEnhancement  
DMN2310UT-13


MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 10K
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Diodes Incorporated 9700
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AUD 0.1112
Multiples of: 5

                   
DMP3056L-13


MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A
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Diodes Incorporated 9700
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AUD 0.1425
Multiples of: 10000

   P - Channel     Smd/SmtSOT - 23 - 3ReelSi1 Channel     
DMN3016LFDE-13


Diodes Incorporated MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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Diodes Incorporated 9700
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AUD 0.1636
Multiples of: 10000

10 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C2.02 WSmd/SmtU - DFN2020 - E - 6Tape And ReelSi1 Channel20 V25.1 nCEnhancement  
DMC1229UFDB-13


Diodes Incorporated MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
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Diodes Incorporated 9700
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AUD 0.2097
Multiples of: 10000

           Reel       
DMC31D5UDJ-7


MOSFET 30V N & P Enh FET Low RDSon 22.2pF
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Diodes Incorporated 9700
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AUD 0.2151
Multiples of: 10000

220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN And P - Channel12 V1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
STD35NF06L


TO-252-3L MOSFETs ROHS
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TECH PUBLIC 9700
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AUD 0.2681
Multiples of: 5

                   
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