MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84DW-7-F


50V 130mA 300mW 10O@5V,100mA 2 P-Channel SOT-363-6(SC-70-6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 10262
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AUD 0.0414
Multiples of: 10

130 mA50 V10 OhmsP - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
IPP083N10N5AKSA1


Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
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Infineon 10185
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AUD 1.5337
Multiples of: 1

            Optimos 5      
NVMFS5C670NLWFAFT1G


MOSFET TRENCH 6 60V NFET
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ON Semiconductor 10185
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AUD 1.6423
Multiples of: 1500

71 A60 V5.1 mOhmsn - channel 1.2 V- 55 C+ 175 C61 Wsmd/smtDFN - 5Cut Tapesi1 channel20 V20 nCenhancementaec - q100 
PSMN102-200Y,115


NXP Semiconductors MOSFET Trans MOSFET N-CH 200V 21.5A 5-Pin
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Nexperia 10185
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AUD 2.0605
Multiples of: 1

21.5 A200 V102 mOhmsN - Channel  - 55 C+ 150 C113 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V Enhancement  
DMG6898LSDQ-13


MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss
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Diodes Incorporated 10182
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AUD 0.5902
Multiples of: 1

9.5 A , 9.5 A20 v , 20 V11 mOhms , 11 mOhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C1.28 WSmd/SmtSO - 8ReelSi2 Channel+/- 12 v , +/- 12 V26 nC , 26 nCEnhancementAec - Q101 
FQD30N06TM


MOSFET 60V 22.7A N-CHANNEL QFET MOSFET
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ON Semiconductor 10166
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AUD 0.756
Multiples of: 1

22.7 A60 V45 mOhmsN - Channel25 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 2ReelSi1 Channel25 V Enhancement  
IRF1018ESTRLPBF


N-Channel 60 V 79A (Tc) 110W (Tc) Surface Mount D2PAK
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Infineon 10151
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AUD 1.0029
Multiples of: 1

79 A60 V7.1 mOhmsN - Channel    110 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V46 nC   
SSM6K804R,LF


MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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Toshiba 10132
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AUD 0.4016
Multiples of: 1

           ReelSi      
BSC011N03LSI


Infineon Technologies MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
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Infineon 10123
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AUD 0.9516
Multiples of: 1

100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8-Si1 Channel10 V68 nCEnhancement Optimos
DMP2035UVT-7


MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A
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Diodes Incorporated 6300
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AUD 0.0947
Multiples of: 5

6 A20 V35 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel12 V15.4 nCEnhancement  
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