MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KDW


MOSFET N Trench 60V 115mA 2.5V @ 250uA 3 Ω @ 500mA,10V SC-70-6 (SOT-363) RoHS
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Panjit 9901
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AUD 0.0388
Multiples of: 10

                   
DMN10H170SFG-13


MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
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Diodes Incorporated 9872
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AUD 0.2968
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8.5 A100 V99 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V14.9 nCEnhancement  
DMP2305U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 9864
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AUD 0.0474
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4.2 A20 V60 mOhmsP - Channel 500 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7.6 nCEnhancement  
IPP042N03L G


Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3
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Infineon 9852
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AUD 0.9743
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70 A30 V4.2 mOhmsN - Channel20 V1 V- 55 C+ 175 C79 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V18 nCEnhancement Optimos
STN1HNK60


Transistor: N-MOSFET; unipolar; 600V; 0.4A; 3.3W; SOT223
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STMicroelectronics 9845
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AUD 0.3028
Multiples of: 5

            Supermesh      
IRF9Z34NSTRLPBF


Transistor: P-MOSFET; unipolar; -55V; -19A; 3.8W; D2PAK
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Infineon 9842
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AUD 0.77
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19 A55 V100 mOhmsP - Channel    68 WSmd/SmtD2PAKReelSi1 Channel20 V23.3 nC   
TK2P90E,RQS


MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A
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Toshiba 9827
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AUD 0.4013
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2 A900 V4.7 OhmsN - Channel 2.5 V-+ 150 C80 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V12 nCEnhancement Dtmosiv
BSH108


SOT-23 MOSFETs ROHS
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TECH PUBLIC 9816
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AUD 0.0374
Multiples of: 10

                   
LND150N8-G


Transistor: N-MOSFET; unipolar; 500V; 0.03A; 1.6W; SOT89-3
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Microchip 9810
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AUD 0.9178
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30 mA500 V1 kOhmsN - Channel 800 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
DMN67D7L-13


MOSFETs MOSFET BVDSS: 41V-60V
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Diodes Incorporated 9806
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AUD 0.0446
Multiples of: 10

                   
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