MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE20P70G


20V 70A 2.3mΩ@4.5V,20A 130W P Channel PDFN-8(4.9x5.8) MOSFETs ROHS
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NCE Power 10326
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AUD 0.6565
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SIA928DJ-T1-GE3


MOSFET Dual N-Ch 30V Vds 3nC Qg Typ
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Vishay 10316
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AUD 0.2647
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           Cut TapeSi     Trenchfet
EM6K1T2R


MOSFET 2N-CH 30V .1A
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ROHM 10312
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AUD 0.234
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100 mA30 V7 OhmsN - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel20 V Enhancement  
AO3401A


30V 4A 1.56W 51mΩ@10V,4A 1.3V@250uA P Channel SOT-23-3L MOSFETs ROHS
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MSKSEMI 10311
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AUD 0.0426
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BSC320N20NS3 G


MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
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Infineon 10309
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AUD 2.7381
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36 A200 V27 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V22 nCEnhancement Optimos
DMG2301L-13


MOSFET MOSFET BVDSS
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Diodes Incorporated 10295
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AUD 0.0589
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IRLR8726


TO-252 MOSFETs ROHS
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TECH PUBLIC 10293
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AUD 0.1527
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IRF8707TRPBF


MOSFET N Trench 30V 11A 2.35V @ 25uA 11.9 mΩ @ 11A,10V SOIC-8_150mil RoHS
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Infineon 10277
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AUD 0.5615
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11 A30 V17.5 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V6.2 nC   
PMCA14UNYL


MOSFET 12V N-CHANNEL TRENCHMOS
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Nexperia 10276
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AUD 0.227
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14 A12 V35 mOhmsN - Channel 900 mV- 55 C+ 150 C3.9 WSMD/SMTDSN1010 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V8 nCEnhancement  
NTR4171PT1G


P-Channel 30 V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 10262
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AUD 0.1174
Multiples of: 5

3.5 A30 V75 mOhmsP - Channel 700 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V15.6 nCEnhancement  
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