MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP4468PBF


MOSFET N Trench 100V 195A 4V @ 250uA 2.6 mΩ @ 180A,10V TO-247 (AC) RoHS
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Infineon 9700
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AUD 2.1336
Multiples of: 1

290 A100 V2 mOhmsN - Channel    520 WThrough HoleTO - 247ACTubeSi1 Channel20 V360 nC   
IRFR310TRPBF-BE3


MOSFET 400V N-CH
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Vishay 9680
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AUD 0.7192
Multiples of: 1

1.7 A400 V3.6 OhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V12 nCEnhancement  
IPD050N03L G


MOSFET N-CH 30V 50A 5mOhms
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Infineon 9679
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AUD 0.6364
Multiples of: 1

50 A30 V4.2 mOhmsN - Channel 1 V- 55 C+ 175 C68 WSmd/SmtTO - 252ReelSi1 Channel20 V31 nCEnhancement Optimos
DMN63D1LT-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 9675
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AUD 0.225
Multiples of: 1

320 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C330 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V392 pCEnhancement  
TSM070NH04CV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9672
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AUD 0.6003
Multiples of: 1

54 A40 V N - Channel 3.6 V- 55 C+ 150 C36 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement PerFET
DMP22D6UFB4Q-7B


MOSFETs MOSFET BVDSS: 8V~24V X2-DFN1006-3 T and R 10K
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Diodes Incorporated 9667
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AUD 0.0723
Multiples of: 1

           Reel , Cut TapeSi      
STF2N95K5


MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected
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STMicroelectronics 9655
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AUD 0.3842
Multiples of: 1

2 A950 V4.2 OhmsN - Channel30 V4 V  20 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V10 nC  Supermesh
TPDMP2165UW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 9137
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AUD 0.0569
Multiples of: 10

                   
JMSL0302AG


DFN-5(5.1x6.1) MOSFETs ROHS
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JieJie 9025
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AUD 0.2638
Multiples of: 5

                   
BSC100N10NSFGATMA1


MOSFET TRENCH >=100V
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Infineon 4850
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AUD 1.6666
Multiples of: 5000

           Reel      Optimos
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