MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4431CDY-T1-E3


Vishay Semiconductors MOSFET 30V 9.0A 4.2W 32mohm 10V
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Vishay 10257
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AUD 0.5605
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7 A- 30 V32 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi 20 V Enhancement Trenchfet
BSC360N15NS3 G


Infineon Technologies MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3
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Infineon 10249
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AUD 1.141
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33 A150 V36 mOhmsN - Channel20 V3 V- 55 C+ 150 C74 WSmd/SmtTDSON - 8ReelSi1 Channel20 V12 nCEnhancement Optimos
WSP4984


MOSFET 2 N Channel (Dual) 40V 10A (Tc) 2.7V @ 250uA 20 mΩ @ 6.6A,10V SOP-8_150mil RoHS
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Winsok 10235
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AUD 0.2616
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FDMA507PZ


Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
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ON Semiconductor 10230
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AUD 0.33
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   P Channel               
DMTH6016LFDFW-7


MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
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Diodes Incorporated 10221
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AUD 0.4271
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9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancement  
IAUC120N04S6N013ATMA1


MOSFET MOSFET_20V 40V
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Infineon 10216
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AUD 0.99
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           Cut Tape       
BSS214NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 10197
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AUD 0.0803
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1.5 A20 V140 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel4.5 V800 pCEnhancementAec - Q101 
IPS70R1K4CEAKMA1


700V 5.4A 53W 1.4O@1A,10V N Channel TO-251-3-11 MOSFETs ROHS
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Infineon 10185
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AUD 0.5131
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 700 V        TO - 251 - 3Tubesi     coolmos
NVMFS5885NLT1G


MOSFET Single N-Channel Power MOSFET 60V, 39A, 15mO
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ON Semiconductor 10185
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AUD 0.7153
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39 A60 V15.2 mOhmsn - channel 1.5 V- 55 C+ 175 C54 Wsmd/smtSO - 8Reelsi1 channel20 V21 nC aec - q101 
NVMFS5C670NLWFAFT1G


MOSFET TRENCH 6 60V NFET
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ON Semiconductor 10185
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AUD 1.5917
Multiples of: 1500

71 A60 V5.1 mOhmsn - channel 1.2 V- 55 C+ 175 C61 Wsmd/smtDFN - 5Cut Tapesi1 channel20 V20 nCenhancementaec - q100 
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