MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K357R,LF


MOSFET LowON Res MOSFET ID=.65A VDSS=60V
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Toshiba 10083
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AUD 0.2071
Multiples of: 5

650 mA60 V1.8 OhmsN - Channel 1.3 V + 150 C1.5 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel12 V1.5 nCEnhancement  
PT2301B


SOT-23 MOSFETs ROHS
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PUOLOP 10079
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AUD 0.0204
Multiples of: 20

                   
BSC084P03NS3 G


MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
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Infineon 10048
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AUD 0.7594
Multiples of: 1

78.6 A30 V6.1 mOhmsP - Channel 3.1 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel25 V58 nCEnhancement Optimos
SI2323DS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 10044
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AUD 0.0797
Multiples of: 5

                   
ECH8661-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 10038
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AUD 0.5971
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7 A30 V24 mOhmsN - Channel, P - Channel  - 55 C+ 150 C1.3 WSmd/SmtECH - 8ReelSi2 Channel20 V11.8 nC , 13 nC   
SSM6P816R,LF


MOSFETs MOSFET, DUAL P-CH, 20V, 6A, TSOP-F
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Toshiba 10033
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AUD 0.2406
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           Reel , Cut TapeSi      
DMN61D8LQ-7


MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW
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Diodes Incorporated 10021
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AUD 0.2463
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470 mA60 V2.4 OhmsN - Channel 1.3 V- 55 C+ 150 C390 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 12 V740 pCEnhancementAec - Q101 
SIZF5302DT-T1-RE3


MOSFET P-CHANNEL 30 V MOSFET PWRPAK
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Vishay 10016
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AUD 1.5215
Multiples of: 1

100 A30 V3.2 mOhmsN - Channel 2 V- 55 C+ 150 C48.1 WSMD/SMTPowerpair 3 x 3FS - 12BulkSi2 Channel- 12 V , + 16 V6.7 nCEnhancement  
FDPF320N06L


MOSFET 60V NCHAN PwrTrench
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ON Semiconductor 10012
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AUD 1.6343
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21 A60 V20 mOhmsN - Channel  - 55 C+ 175 C26 WThrough HoleTO - 220FTubeSi     Powertrench
DMG3404L-7


MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC
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Diodes Incorporated 10010
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AUD 0.1122
Multiples of: 5

5.8 A30 V21 mOhmsN - Channel 1 V- 55 C+ 150 C1.33 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V13.2 nCEnhancement  
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