MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9510PBF


P-Channel 100 V 4A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 10470
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AUD 0.5141
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4 A100 V1.2 OhmsP - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V8.7 nCEnhancement  
MMFTP84


Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.25W; SOT23
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Diotec 10463
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AUD 0.0367
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130 mA60 V10 OhmsP - Channel 800 mV + 150 C250 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement MMFTP84
DMN1004UFV-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 10458
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AUD 0.3213
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70 A12 V2.8 mOhmsN - Channel 300 mV- 55 C+ 150 C1.9 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel8 V47 nCEnhancement  
FQD17P06TM


Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
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ON Semiconductor 10453
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AUD 0.7595
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            Qfet®      
IRF7495TRPBF


MOSFET N Trench 100V 7.3A 4V @ 250uA 22 mΩ @ 4.4A,10V SOIC-8_150mil RoHS
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Infineon 10449
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AUD 0.9132
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            Hexfet®      
AO6601


SOT-23-6 MOSFETs ROHS
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Youtai 10431
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AUD 0.0852
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IPD50N04S4-10


Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
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Infineon 10425
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AUD 0.4749
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50 A40 V9.3 mOhmsN - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel   Aec - Q101Optimos
IRLMS2002TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 10423
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AUD 0.1321
Multiples of: 5

                   
IRF7240TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 10423
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AUD 0.2627
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DMN2230UQ-7


MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW
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Diodes Incorporated 10417
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AUD 0.1816
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2 A20 V110 mOhmsN - Channel 500 mV- 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.3 nCEnhancementAec - Q101 
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