MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC084P03NS3 G


MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
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Infineon 10048
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AUD 0.7594
Multiples of: 1

78.6 A30 V6.1 mOhmsP - Channel 3.1 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel25 V58 nCEnhancement Optimos
DMN2992UFB4-7B


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 10015
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AUD 0.0566
Multiples of: 1

830 mA20 V990 mOhmsN - Channel 1 V- 55 C+ 150 C1.02 WSMD/SMTX2 - DFN1006 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V410 pCEnhancement  
SI8406DB-T2-E1


MOSFET 20V 16A 13W 33mohm @ 4.5V
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Vishay 10011
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AUD 0.2928
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   N - Channel     Smd/SmtBUMP 6ReelSi     Trenchfet
AUIRLR2905ZTRL


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms
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Infineon 10011
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AUD 2.0059
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60 A55 V22.5 mOhmsN - Channel  - 55 C 110 WSmd/SmtDPAK - 3ReelSi1 Channel16 V23 nCEnhancementAec - Q101 
STF2N95K5


MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected
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STMicroelectronics 9980
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AUD 0.4209
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2 A950 V4.2 OhmsN - Channel30 V4 V  20 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V10 nC  Supermesh
IPD60R1K4C6ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 9755
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AUD 0.5057
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3.2 A600 V1.26 OhmsN - Channel 2.5 V- 55 C+ 150 C28.4 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V9.4 nCEnhancement Coolmos
WPM2015-3/TR


SOT-23 MOSFETs ROHS
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TECH PUBLIC 9021
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AUD 0.0486
Multiples of: 10

                   
AO3414-HXY


20V 2.3A 55mΩ@4.5V 1.2V null SOT-23 MOSFETs ROHS
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HXY MOS 8972
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AUD 0.0141
Multiples of: 50

                   
IRLML2060TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3763
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AUD 0.0673
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FDP083N15A_F102


MOSFET 150V N-CHANNEL POWERTRENCH MOSFET
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ON Semiconductor 884
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AUD 4.2075
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105 A150 V6.85 mOhmsN - Channel 4 V  231 WThrough HoleTO - 220TubeSi1 Channel20 V64.5 nC   
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