MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002NXAKR


MOSFET 60 V single N-channel Trench MOSFET
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Nexperia 10319
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AUD 0.0345
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300 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.33 nCEnhancement  
SIA928DJ-T1-GE3


MOSFET Dual N-Ch 30V Vds 3nC Qg Typ
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Vishay 10316
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AUD 0.2647
Multiples of: 1

           Cut TapeSi     Trenchfet
BSC320N20NS3 G


MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
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Infineon 10309
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AUD 2.7381
Multiples of: 1

36 A200 V27 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V22 nCEnhancement Optimos
DMG2301L-13


MOSFET MOSFET BVDSS
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Diodes Incorporated 10295
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AUD 0.0589
Multiples of: 10

                   
IRLR8726


TO-252 MOSFETs ROHS
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TECH PUBLIC 10293
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AUD 0.1527
Multiples of: 5

                   
PMCA14UNYL


MOSFET 12V N-CHANNEL TRENCHMOS
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Nexperia 10276
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AUD 0.2512
Multiples of: 1

14 A12 V35 mOhmsN - Channel 900 mV- 55 C+ 150 C3.9 WSMD/SMTDSN1010 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V8 nCEnhancement  
PJM3400NSA


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 41 mΩ @ 5.8A,10V SOT-23 RoHS
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Pingjingsemi 10274
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AUD 0.0397
Multiples of: 10

                   
IRFR420TRPBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 10272
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AUD 0.5761
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReel       
IRF830PbF


MOSFET N Trench 500V 4.5A 4V @ 250uA 1.5 Ω @ 2.7A,10V TO-220 (TO-220-3) RoHS
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Infineon 10268
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AUD 0.6883
Multiples of: 1

                   
ZXMN3F30FHTA


N-Channel 30 V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 10264
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AUD 0.2397
Multiples of: 1

4.6 A30 V47 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
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