MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
30N03A


30V 90A 5mO@30A,10V 105W null TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai 16378
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AUD 0.1048
Multiples of: 5

                   
SSM6L56FE,LM


MOSFET Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W
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Toshiba 14178
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AUD 0.0739
Multiples of: 1

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HXY4884S


40V 12A 2.9W 16mΩ@10V 2V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
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HXY MOS 10364
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AUD 0.1904
Multiples of: 5

                   
BSC320N20NS3 G


MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
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Infineon 10309
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AUD 2.7381
Multiples of: 1

36 A200 V27 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V22 nCEnhancement Optimos
BSC009NE2LS5ATMA1


Infineon Technologies MOSFET LV POWER MOS
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Infineon 9700
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AUD 1.0814
Multiples of: 5000

100 A25 V1.25 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtSUPERSO - 8ReelSi1 Channel+/- 16 V20 nCEnhancement Optimos
AO3402A


MOSFET N Trench 30V 4A 1.4V @ 250uA 55 mΩ @ 4A,10V SOT-23 RoHS
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Youtai 8652
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AUD 0.0254
Multiples of: 20

                   
IRFR3806TRPBF


MOSFET N Trench 60V 43A 4V @ 50uA 15.8 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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Infineon 8466
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AUD 0.5158
Multiples of: 1

43 A60 V12.6 mOhmsN - Channel20 V   71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V22 nC   
LN2306LT1G


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 38 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 1610
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AUD 0.036
Multiples of: 20

                   
DMTH43M8LK3Q-13


MOSFET MOSFETBVDSS: 31V-40V
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Diodes Incorporated 114
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AUD 0.6798
Multiples of: 1

100 A40 V2.9 mOhmsN - Channel 1 V- 55 C+ 175 C88 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V38.5 nCEnhancementAec - Q101 
NTMFS4C05NT1G


ON Semiconductor MOSFET
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ON Semiconductor 0
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AUD 0.3064
Multiples of: 1

78 A30 V2.7 mOhmsN - Channel 1.3 V- 55 C+ 150 C33 WSmd/SmtSO - 8FLReelSi1 Channel20 V30 nCEnhancement  
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