MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF540NPBF


MOSFET N Trench 100V 33A 4V @ 250uA 44 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 101646
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AUD 0.2449
Multiples of: 5

            Hexfet®      
TM100N03DF


30V 100A 5.5m PDFN3x3-8L MOSFETs ROHS
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Tritech-MOS 10733
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AUD 0.1618
Multiples of: 5

                   
SI7421DN-T1-E3


MOSFET 30V 9.8A 3.6W 25mohm @ 10V
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Vishay 10730
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AUD 0.9533
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
DMN2990UFA-7B


N-Channel 20 V 510mA (Ta) 400mW (Ta) Surface Mount X2-DFN0806-3
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Diodes Incorporated 10679
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AUD 0.0521
Multiples of: 10

510 mA20 V990 mOhmsN - Channel 1 V- 55 C+ 150 C400 mWSmd/SmtX2 - DFN0806 - 3Cut TapeSi1 Channel8 V500 pCEnhancement  
BXS1150N10M


Transistor: N-MOSFET
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Bridgelux 10670
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AUD 0.1185
Multiples of: 1

                   
PMGD290XN,115


Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
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Nexperia 10670
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AUD 0.2498
Multiples of: 1

860 mA20 V350 mOhmsN - Channel 500 mV- 55 C+ 150 C0.41 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.72 nCEnhancement  
Hot ZVN4424GTA


N-Channel 240 V 500mA (Ta) 2.5W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 10670
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AUD 0.3452
Multiples of: 1000

   N - channel  - 55 C+ 150 C Smd/smtSOT - 223Reel       
IPP90R1K0C3XKSA1


Transistor: N-MOSFET; unipolar; 900V; 3.6A; 89W; PG-TO220-3
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Infineon 10670
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AUD 1.6456
Multiples of: 1

            coolmos      
IPB120N06S4-H1


MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
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Infineon 10665
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AUD 3.2109
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NTD2955T4G


ON Semiconductor MOSFET -60V -12A P-Channel
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ON Semiconductor 10626
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AUD 0.5567
Multiples of: 1

- 12 A- 60 V155 mOhmsP - Channel20 V - 55 C+ 175 C55 WSmd/SmtDPAK - 3Reel    Enhancement  
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