MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS447DN-T1-GE3


Vishay Semiconductors MOSFET P-Channel 20V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 10590
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AUD 0.1707
Multiples of: 1

   P - Channel     Smd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel    Trenchfet, Powerpak
PJM3401PSA


MOSFET P Trench 30V 4.1A 1.3V @ 250uA 65 mΩ @ 4.1A,10V SOT-23 RoHS
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Pingjingsemi 10553
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AUD 0.0268
Multiples of: 10

                   
NTD4979N-35G


N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK
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ON Semiconductor 10548
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AUD 0.4279
Multiples of: 1

9 A30 V9 mOhmsn - channel    2.56 Wsmd/smtTO - 252 - 3-si1 channel     
BSZ42DN25NS3 G


MOSFET N-Channel 250V MOSFET
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Infineon 10548
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AUD 0.9656
Multiples of: 1

5 A250 V371 mOhmsN - Channel 2 V- 55 C+ 150 C33.8 WSmd/SmtTDSON - 8ReelSi1 Channel20 V5.5 nCEnhancement Optimos
NTDV3055L104T4G


ON Semiconductor MOSFET NFET 60V 12A 0.104R
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ON Semiconductor 10536
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AUD 0.4912
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12 A60 V104 mOhmsn - channel 2 V- 55 C+ 175 C48 Wsmd/smtDPAK - 3Reelsi1 channel 20 nC aec - q101 
DMTH6009LK3Q-13


MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
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Diodes Incorporated 10535
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AUD 0.8929
Multiples of: 1

59 A60 V10 mOhmsN - Channel 1.4 V- 55 C+ 175 C60 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V33.5 nCEnhancementAec - Q101 
JSM2305


SOT-23 MOSFETs ROHS
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JSMSEMI 10223
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AUD 0.0312
Multiples of: 20

                   
STP120NF10


Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; TO220-3
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STMicroelectronics 9977
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AUD 2.0177
Multiples of: 1

                   
IRFZ48NSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
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Infineon 2328
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AUD 0.996
Multiples of: 800

64 A55 V14 mOhmsN - Channel 4 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel20 V81 nC   
DMN26D0UFB4-7


N-Channel 20 V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3
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Diodes Incorporated 0
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AUD 0.1292
Multiples of: 5

240 mA20 V3 OhmsN - Channel 600 mV- 55 C+ 150 C350 mWSmd/SmtX2 - DFN1006 - 3Cut TapeSi1 Channel4.5 V Enhancement  
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