MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LNTK3043PT5G


null 0.255A P Channel SOT-723 MOSFETs ROHS
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Leshan 9758
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AUD 0.0492
Multiples of: 10

                   
CJ3415 R15


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 9758
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AUD 0.0563
Multiples of: 10

                   
BUK9Y3R0-40E,115


MOSFET N-channel 40 V 3.0 mo FET
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Nexperia 9756
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AUD 0.8517
Multiples of: 1

100 A40 V2.47 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C194 WSmd/SmtLFPAK56 - 4Reel   35.5 nC   
PMDXB600UNEZ


NXP Semiconductors MOSFET 20 V, dual N-channel Trench MOSFET
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Nexperia 9753
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AUD 0.1082
Multiples of: 5

600 mA , 600 mA20 v , 20 V3 Ohms , 3 OhmsN - Channel 450 mV , 450 mV- 55 C+ 150 C380 mWSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 v , +/- 8 V0.4 nCEnhancement  
SI2302DDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay 9738
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AUD 0.0687
Multiples of: 5

2.9 A20 V57 mOhmsN - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.5 nCEnhancement Trenchfet
FDN352AP


SOT-23 MOSFETs ROHS
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Youtai 9641
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AUD 0.0392
Multiples of: 10

                   
2N7002LT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 9467
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AUD 0.0176
Multiples of: 20

                   
BUK7Y3R5-40E,115


MOSFET BUK7Y3R5-40E/LFPAK/REEL 7" Q1/
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Nexperia 7824
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AUD 0.6333
Multiples of: 1

100 A40 V3.5 mOhmsN - Channel 2.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 5Cut TapeSi1 Channel20 V49.4 nCEnhancement  
IRLR3105TRPBF


Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
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Infineon 5899
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AUD 0.7213
Multiples of: 1

25 A55 V43 mOhmsN - Channel 3 V- 55 C+ 175 C57 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
FDD3670


MOSFET 100V NCh PowerTrench
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ON Semiconductor 53
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AUD 2.1997
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34 A100 V22 mOhmsn - channel  - 55 C+ 175 C3.8 Wsmd/smtTO - 252 - 3Cut Tapesi1 channel20 V enhancement powertrench
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