MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISC037N03L5ISATMA1


30V 3.7mO@30A,10V N Channel TDSON-8-6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 10930
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AUD 0.323
Multiples of: 1

78 A30 V3.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C37 WSMD/SMTTDSON - FL - 8Optimos ~ Strongirfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V8.5 nCEnhancement OptiMOS ~ StrongIRFET
SiR5623DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V
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Vishay 10918
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AUD 1.2013
Multiples of: 1

37.1 A60 V24 mOhmsP - Channel 2.6 V- 55 C+ 150 C59.5 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 20 V , + 20 V21.8 nCEnhancement  
IRF530PBF-BE3


MOSFET 100V N-CH
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Vishay 10914
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AUD 1.0405
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14 A100 V160 mOhmsN - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
RQ3E080BNTB


ROHM Semiconductor MOSFET
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ROHM 10911
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AUD 0.1868
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8 A30 V11 mOhmsN - Channel 2.5 V  2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V14.5 nC   
BSD214SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
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Infineon 10907
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AUD 0.0856
Multiples of: 1

            Optimos 2      
2N7002KD


60V 340mA 900mO@10V,500mA 150mW 2 N-Channel SOT-363 MOSFETs ROHS
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FUXINSEMI 10905
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AUD 0.0285
Multiples of: 20

                   
AO6420


SOT23-6 MOSFETs ROHS
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TECH PUBLIC 10903
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AUD 0.1855
Multiples of: 5

                   
FDMS5352


Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
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ON Semiconductor 10893
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AUD 2.2698
Multiples of: 1

            Powertrench®      
BSC120N03LS G


Infineon Technologies MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
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Infineon 10890
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AUD 0.2881
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12 A30 V12 mOhmsN - Channel20 V1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V15 nCEnhancement Optimos
AO3407


30V 4.5A 1.4W 38m@10V,4.5A 1.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 10883
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AUD 0.0386
Multiples of: 20

                   
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