MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002WT1G


MOSFET SMALL SIGNAL MOSFET 6.8V LO C
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ON Semiconductor 119310
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AUD 0.0371
Multiples of: 3000

310 mA60 V1.6 OhmsN - Channel  - 55 C+ 150 C280 mWSmd/SmtSC - 70 - 3Cut TapeSi1 Channel20 V Enhancement  
DMTH6009LK3Q-13


MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
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Diodes Incorporated 10630
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AUD 0.8584
Multiples of: 1

59 A60 V10 mOhmsN - Channel 1.4 V- 55 C+ 175 C60 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V33.5 nCEnhancementAec - Q101 
BSZ019N03LS


MOSFET N-Channel 30V MOSFET
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Infineon 10629
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AUD 0.8718
Multiples of: 1

40 A30 V1.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel10 V44 nCEnhancement Optimos
Hot BSC036NE7NS3 G


Infineon Technologies MOSFET N-Ch 75V 100A TDSON-8
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Infineon 10624
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AUD 1.6401
Multiples of: 1

100 A75 V3.6 mOhmsN - Channel 2.3 V- 55 C+ 150 C156 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V63.4 nCEnhancement Optimos
SSM6K819R,LF


MOSFETs
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Toshiba 10612
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AUD 0.3969
Multiples of: 1

           ReelSi      
FDPC1002S


MOSFET
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ON Semiconductor 10612
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AUD 0.7289
Multiples of: 916

12 A25 V7.3 mOhmsN - Channel12 V - 55 C+ 150 C1.6 w , 2 WSmd/SmtPOWER CLIP 33 - 8ReelSi2 Channel12 V19 nC , 60 nC   
DMN52D0LT-7


MOSFETs MOSFET BVDSS: 41V-60V SOT523 T&R 3K
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Diodes Incorporated 10610
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AUD 0.0716
Multiples of: 1

350 mA50 V2 OhmsN - Channel 490 mV- 55 C+ 150 C500 mWSMD/SMTSOT523 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V1.5 nCEnhancement  
FDMS8622


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 10596
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AUD 0.6346
Multiples of: 1

4.8 A100 V45 mOhmsN - Channel20 V3 V  2.5 WSmd/SmtPOWER 56 - 8ReelSi1 Channel20 V5 nC  Powertrench
Si3483CDV-T1-E3


MOSFET 30V 8.0A 4.2W 34mohm @ 10V
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Vishay 10590
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AUD 0.6321
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
IRFB7437PBF


MOSFET N Trench 40V 195A (Tc) 3.9V @ 150uA 2 mΩ @ 100A,10V TO-220AB RoHS
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Infineon 1918
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AUD 0.926
Multiples of: 1

250 A40 V2 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi 20 V225 nC  Strongirfet
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