MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Bourne 10476
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AUD 0.0255
Multiples of: 20

                   
TSM3446CX6 RFG


MOSFET 20V 5.3A Single N-Channel Power MOSFET
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Taiwan Semiconductor 10475
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AUD 0.55
Multiples of: 1

           Cut Tape       
AO6601


SOT-23-6 MOSFETs ROHS
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Youtai 10431
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AUD 0.0852
Multiples of: 5

                   
IPD50N04S4-10


Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
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Infineon 10425
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AUD 0.4749
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50 A40 V9.3 mOhmsN - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel   Aec - Q101Optimos
IRLMS2002TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 10423
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AUD 0.1321
Multiples of: 5

                   
IRF7240TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 10423
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AUD 0.2627
Multiples of: 5

                   
BSZ340N08NS3GATMA1


Infineon Technologies MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3
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Infineon 10415
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AUD 0.4187
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23 A80 V34 mOhmsN - Channel 2.8 V- 55 C+ 150 C32 WSmd/SmtTSDSON - 8Reel-1 Channel+/- 20 V6.8 nCEnhancement Optimos
PSMN5R0-30YL,115


MOSFET <=30V N CH TRENCHFET
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Nexperia 10413
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AUD 0.4646
Multiples of: 1

91 A30 V5 mOhmsN - Channel  - 55 C+ 175 C61 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel20 V Enhancement  
NTR4101PT1H


ON Semiconductor MOSFET
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ON Semiconductor 10403
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AUD 0.2118
Multiples of: 1

- 3.2 A- 20 V112 mOhmsP - Channel - 0.72 V- 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V7.5 nC   
DMTH43M8LK3Q-13


MOSFET MOSFETBVDSS: 31V-40V
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Diodes Incorporated 10401
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AUD 0.5599
Multiples of: 1

100 A40 V2.9 mOhmsN - Channel 1 V- 55 C+ 175 C88 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V38.5 nCEnhancementAec - Q101 
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