MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SN7002NH6433XTMA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 9700
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AUD 0.0505
Multiples of: 1

200 mA60 V2.5 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1.5 nCEnhancement  
DMC31D5UDJ-7


MOSFET 30V N & P Enh FET Low RDSon 22.2pF
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Diodes Incorporated 9700
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AUD 0.2291
Multiples of: 10000

220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN And P - Channel12 V1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
IRFL210TRPBF


N-Channel 200 V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 9700
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AUD 0.257
Multiples of: 2500

960 mA200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V8.2 nCEnhancement  
TM50G03NF


30V DFN-8L(5x6) MOSFETs ROHS
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Tritech-MOS 9700
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AUD 0.3124
Multiples of: 5

                   
IPD60R1K5CEAUMA1


MOSFET CONSUMER
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Infineon 9700
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AUD 0.3641
Multiples of: 2500

 600 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
STS10N3LH5


STMicroelectronics MOSFET N-channel 30 V 10 A SO-8 STripFET
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STMicroelectronics 9700
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AUD 0.3839
Multiples of: 2500

10 A30 V19 mOhmsn - channel     smd/smtSOIC - 8Reel       
PMZB390UNEYL


N-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
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Nexperia 9675
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AUD 0.1757
Multiples of: 5

900 mA30 V390 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi1 Channel8 V1.3 nCEnhancement  
AO3400


30V 5A 35mΩ@10V,5A 1.4W N Channel SOT-23 MOSFETs ROHS
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Bourne 8749
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AUD 0.0482
Multiples of: 20

                   
PMZB1200UPEYL


P-Channel 30 V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3
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Nexperia 8133
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AUD 0.1148
Multiples of: 5

         Smd/SmtDFN1006B - 3ReelSi      
BSC093N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
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Infineon 4850
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AUD 0.4005
Multiples of: 5000

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