MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPH1R403NL


MOSFET N Trench 30V 150A 2.3V @ 500uA 1.4 mΩ @ 30A,10V SOP Advance RoHS
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Toshiba 20178
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AUD 0.4955
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TSM3446CX6 RFG


MOSFET 20V 5.3A Single N-Channel Power MOSFET
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Taiwan Semiconductor 10475
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AUD 0.55
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           Cut Tape       
NVJD4401NT1G


MOSFET NFET SC88 20V 630MA 375MO
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ON Semiconductor 10463
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AUD 0.3138
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630 mA20 V375 mOhmsN - Channel     Smd/SmtSOT - 363 - 6ReelSi    Aec - Q101 
SI4943BDY-T1-E3


MOSFET 20V 8.4A 2W
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Vishay 10453
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AUD 1.4819
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
SIS4406DN-T1-GE3


MOSFETs 40V Vds +20, -16V Vgs PowerPAK 1212-8
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Vishay 10442
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AUD 0.5406
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62.8 A40 V4.75 mOhmsN - Channel 2.4 V- 55 C+ 150 C33.7 WSMD/SMTPOWERPAK 1212 - 8SReel , Cut TapeSi1 Channel- 16 V , + 20 V23.7 nCEnhancement  
BSZ084N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
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Infineon 10435
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AUD 0.8948
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            Optimos 5      
NCE4060K


MOSFET N Trench 40V 60A (Tc) 2.5V @ 250uA 13 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 10232
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AUD 0.2059
Multiples of: 1

                   
TDM3436


MOSFET N Trench 40V 25A 2.5V @ 250uA 3.1 mΩ @ 25A,10V DFN-8_5x6mm RoHS
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Techcode 8890
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AUD 0.4687
Multiples of: 5

                   
SSM3J334R,LF(T


MOSFET P Trench 30V 4A 2V @ 100uA 71 mΩ @ 3A,10V SOT-23F RoHS
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Toshiba 7886
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AUD 0.0681
Multiples of: 10

                   
AO4407A


SOP-8 MOSFETs ROHS
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JSMSEMI 6149
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AUD 0.1306
Multiples of: 5

                   
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