MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRF7416TRPBF


MOSFET P Trench 30V 10A 2.04V @ 250uA 20 mΩ @ 5.6A,10V SOIC-8_150mil RoHS
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Infineon 35039
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AUD 0.4121
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   P Channel      SOIC - 8Reel       
SI2302


20V 2.6A 85mΩ@4.5V,2.6A 900mW 1.5V@250uA N Channel 880pF@6V +150℃@(Tj) SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 20816
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AUD 0.0232
Multiples of: 20

                   
IRL2910STRLPBF


N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
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Infineon 11640
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AUD 1.8825
Multiples of: 800

55 A100 V260 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V93.3 nC   
FDD3670


MOSFET 100V NCh PowerTrench
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ON Semiconductor 10861
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AUD 1.2038
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34 A100 V22 mOhmsn - channel  - 55 C+ 175 C3.8 Wsmd/smtTO - 252 - 3Cut Tapesi1 channel20 V enhancement powertrench
IPD90N06S407ATMA2


MOSFET MOSFET
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Infineon 10833
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AUD 0.5732
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
SI2304DDS-T1-GE3


N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 9200
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AUD 0.1469
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3.6 A30 V60 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.7 nCEnhancement Trenchfet
BSD214SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
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Infineon 8730
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AUD 0.0909
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            Optimos 2      
DMN63D8LW-7


MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
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Diodes Incorporated 7435
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AUD 0.0726
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   N - Channel       ReelSi1 Channel     
15N10


TO-252 MOSFETs ROHS
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TECH PUBLIC 3564
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AUD 0.1513
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DMG3415UFY4Q-7


MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W
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Diodes Incorporated 1658
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AUD 0.3023
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- 2.5 A- 16 V65 mOhmsP - Channel - 1 V- 55 C+ 150 C1.35 WSmd/SmtX2 - DFN2015 - 3ReelSi1 Channel+/- 8 V10 nCEnhancement  
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