MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSL606SN H6327


Infineon Technologies MOSFET N-Ch 60V 4.5A TSOP-6
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Infineon 11230
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AUD 0.2578
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4.5 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C2 WSmd/SmtPG - TSOP - 6ReelSi1 Channel10 V3.7 nCEnhancement  
DMN2004WK


SOT-323 MOSFETs ROHS
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TECH PUBLIC 11219
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AUD 0.0434
Multiples of: 10

                   
IRFR1N60APBF-BE3


N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11209
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AUD 1.2
Multiples of: 1

1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 30 V , + 30 V14 nCEnhancement  
BSZ097N10NS5


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 11206
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AUD 1.0048
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtPG - TSDSON - 8ReelSi1 Channel10 V22 nCEnhancement Optimos
SI2302S


SOT-23 MOSFETs ROHS
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GOODWORK 11203
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AUD 0.0081
Multiples of: 50

                   
SI1400DL-T1-GE3


Vishay Semiconductors MOSFET 20V N-CH (DS) 2.5V Rated Trench
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Vishay 11203
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AUD 0.2853
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1.6 A20 V150 mOhmsn - channel  - 55 C+ 150 C568 mWsmd/smtSOT - 363 - 6Reelsi1 channel12 V   trenchfet
SI3499DV-T1-BE3


MOSFET P-CHANNEL 1.5-V (G-S)
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Vishay 11201
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AUD 0.85
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7 A8 V23 mOhmsP - Channel 750 mV- 55 C+ 150 C1.1 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 5 V , + 5 V28 nCEnhancement  
BSS123


100V 150mA 3.5Ω@10V,120mA 250mW N Channel SOT-23 MOSFETs ROHS
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SLKORMICRO 11193
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AUD 0.0218
Multiples of: 20

                   
CPC3981ZTR


MOSFETs N-CH DEP MOSFET 800V 45 Oh SOT-223-2L TR
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IXYS 11179
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AUD 1.3183
Multiples of: 1

100 mA800 V32.5 OhmsN - Channel  - 55 C+ 150 C2.25 WSMD/SMTSOT - 223 - 2Reel , Cut TapeSi1 Channel- 15 V , + 15 V Depletion  
DMP3125L-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 11169
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AUD 0.1051
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2.5 A30 V76 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3 Si1 Channel10 V3.1 nCEnhancement  
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