MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HKTG90N03


PDFN(5x6) MOSFETs ROHS
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Hottech 11479
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AUD 0.1451
Multiples of: 5

                   
BSC109N10NS3GATMA1


MOSFET N Trench 100V 63A (Tc) 3.5V @ 45uA 10.9 mΩ @ 46A,10V PG-TDSON-8 RoHS
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Infineon 10966
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AUD 1.0396
Multiples of: 1

            Optimos 3      
STB8NM60T4


MOSFET N-Ch 650 Volt 5 Amp
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STMicroelectronics 10912
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AUD 2.2484
Multiples of: 1

8 A600 V900 mOhmsN - Channel  - 55 C+ 150 C100 WSmd/SmtD2PAKReelSi1 Channel30 V Enhancement Mdmesh
NTA4001NT1G


MOSFET 20V 238mA N-Channel
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ON Semiconductor 10886
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AUD 0.0555
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238 mA20 V3 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3Cut TapeSi1 Channel4.5 V Enhancement  
Hot BSC037N08NS5


Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
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Infineon 10859
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AUD 1.54
Multiples of: 1

            Optimos 5      
NTE4151PT1G


MOSFET -20V -760mA P-Channel
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ON Semiconductor 10786
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AUD 0.0489
Multiples of: 10

760 mA20 V490 mOhmsP - Channel  - 55 C+ 150 C313 mWSmd/SmtSC - 89 - 3Cut TapeSi1 Channel6 V Enhancement  
IRFP4668PBF


MOSFET N Trench 200V 130A 5V @ 250uA 9.7 mΩ @ 81A,10V TO-247 (AC) RoHS
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Infineon 9251
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AUD 2.129
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
TSM320N03CX RFG


MOSFET 30V 5.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 7819
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AUD 0.1776
Multiples of: 1

           Cut Tape       
BSC060N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
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Infineon 4850
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AUD 1.3281
Multiples of: 5000

            Optimos 3      
DMN3404L-7


MOSFET N-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 194
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AUD 0.1045
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4.6 A30 V28 mOhmsN - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11.3 nCEnhancement  
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