MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6J825R,LF


MOSFETs
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Toshiba 11247
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AUD 0.154
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           ReelSi      
RV3CA01ZPT2CL


MOSFET PCH -20V -100MA SS
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ROHM 11240
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AUD 0.2917
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100 mA20 V3.8 OhmsP - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtDFN0604 - 3Cut TapeSi1 Channel10 V-Enhancement  
DMN65D9L-7


MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 3K
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Diodes Incorporated 11217
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AUD 0.0487
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           Cut Tape       
SSM6K824R,LF


MOSFETs TSOP6F S-MOS(LF)
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Toshiba 11215
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AUD 0.1776
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           ReelSi      
IRFR1N60APBF-BE3


N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11209
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AUD 1.2
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1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 30 V , 30 V14 nCEnhancement  
IAUC100N08S5N043ATMA1


MOSFET MOSFET_75V 120V
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Infineon 10859
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AUD 1.1943
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SI7892BDP-T1-E3


MOSFET 30V 25A 0.0042Ohm
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Vishay 10285
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AUD 1.4842
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet/Powerpak
FDS5690


MOSFET SO-8 N-CH 60V
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ON Semiconductor 9264
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AUD 0.6218
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7 A60 V28 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
DMN2058UW-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 7716
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AUD 0.0844
Multiples of: 5

3.5 A20 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C0.7 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V7.7 nCEnhancement  
DMN3032LE-13


Diodes Incorporated MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC
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Diodes Incorporated 6935
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AUD 0.1662
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5.6 A30 V29 mOhmsN - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT223Reel-1 Channel+/- 20 V11.3 nCEnhancement  
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