MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TMP3055NF


DFN5x6-8L MOSFETs ROHS
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Tritech-MOS 11572
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AUD 0.1946
Multiples of: 5

                   
ZXMP6A13FTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 11563
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AUD 0.1014
Multiples of: 5

                   
SI2300A


MOSFET N Trench 20V 6A 1V @ 50uA 25 mΩ @ 6A,4.5V SOT-23 RoHS
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Youtai 11553
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AUD 0.0212
Multiples of: 20

                   
FDD8453LZ_F085


Fairchild Semiconductor MOSFET 40V N-Channel POWER TRENCH MOSFET
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ON Semiconductor 11550
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AUD 0.99
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50 A40 V5 mOhmsN - Channel  - 55 C+ 175 C118 WSmd/SmtDPAK - 3ReelSi1 Channel20 V60 nC  Powertrench
TMP4080NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 11544
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AUD 0.4297
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IRFR3411TRPBF


Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
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Infineon 11543
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AUD 0.9179
Multiples of: 1

32 A100 V44 mOhmsN - Channel 4 V- 55 C+ 175 C130 WSmd/SmtDPAK - 3ReelSi1 Channel20 V71 nC   
US6M2GTR


MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
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ROHM 11533
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AUD 0.45
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1.5 A , 1 A30 v , 20 V170 mOhms , 280 mOhmsN - Channel, P - Channel 1.5 v , 2 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
DMHC6070LSD-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 11529
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AUD 0.7403
Multiples of: 1

         Smd/SmtSO - 8Cut TapeSi      
TSM2N7002AKCU RFG


MOSFET 60V, 0.24A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 11524
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AUD 0.1038
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240 mA60 V2.5 OhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V680 pCEnhancement  
DMP4047SK3-13


MOSFET 40V P-Ch Enh FET 45mOhm -10V
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Diodes Incorporated 11523
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AUD 0.3218
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20 A40 V40 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V23.2 nCEnhancement  
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