MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTPF165N65S3H


MOSFET SUPERFET3 FAST 165MOHM TO-220F
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ON Semiconductor 11563
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AUD 3.74
Multiples of: 1

19 A650 V165 mOhmsN - Channel 4 V- 55 C+ 150 C33 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V35 nCEnhancement  
FDD8453LZ_F085


Fairchild Semiconductor MOSFET 40V N-Channel POWER TRENCH MOSFET
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ON Semiconductor 11550
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AUD 0.9776
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50 A40 V5 mOhmsN - Channel  - 55 C+ 175 C118 WSmd/SmtDPAK - 3ReelSi1 Channel20 V60 nC  Powertrench
SSM6L807R,LF


MOSFETs
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Toshiba 11543
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AUD 0.2404
Multiples of: 1

           ReelSi      
Hot IRFU420PBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 11537
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AUD 0.7205
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           TubeSi      
NTA4151PT1H


MOSFET PFET SC75 20V 760MA TR
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ON Semiconductor 11533
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AUD 0.0476
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- 760 mA- 20 V360 mOhmsp - channel 450 mV- 55 C+ 150 C301 mWsmd/smtSC - 75 - 3Reelsi1 channel- 1.8 V2.1 nCenhancement  
US6M2GTR


MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
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ROHM 11533
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AUD 0.45
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1.5 A , 1 A30 v , 20 V170 mOhms , 280 mOhmsN - Channel, P - Channel 1.5 v , 2 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
PSMN7R5-30YLDX


N-Channel 30 V 51A (Tj) 34W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 11329
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AUD 0.2246
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51 A30 V10.2 mOhmsN - Channel2.2 V2.2 V- 55 C+ 175 C34 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V11.3 nCEnhancement  
SSM3K333R,LF


N-Channel 30 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba 5726
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AUD 0.1342
Multiples of: 1

6 A30 V107 mOhmsN - Channel 1.3 V + 150 C2 WSmd/SmtSOT - 23FReelSi1 Channel10 V3.4 nCEnhancement  
DMN2075U-7


MOSFET N-Ch -20V VDSS Enchanced Mosfet
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Diodes Incorporated 4006
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AUD 0.075
Multiples of: 5

4.2 A20 V25 mOhmsN - Channel  - 55 C+ 150 C800 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
SI2336DS-T1-GE3


MOSFET 30V Vds 8V Vgs SOT-23
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Vishay 2604
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AUD 0.2962
Multiples of: 5

5.2 A30 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
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