MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJD16P06A_L2_00001


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit 11640
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AUD 0.6113
Multiples of: 1

                   
STL30N10F7


MOSFET N-Ch 100V 0.027 Ohm typ. 8A STripFET VII
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STMicroelectronics 11640
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AUD 0.6138
Multiples of: 3000

8 A100 V27 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C4.8 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V14 nC  Stripfet
IRLR3105TRPBF


Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
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Infineon 11640
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AUD 0.6261
Multiples of: 1

25 A55 V43 mOhmsN - Channel 3 V- 55 C+ 175 C57 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
IPS70R950CEAKMA1


MOSFET CONSUMER
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Infineon 11640
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AUD 0.649
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 700 V        TO - 251 - 3Tubesi     coolmos
IRFR9024TRPBF


MOSFET P-Chan 60V 8.8 Amp
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Vishay 11640
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AUD 0.6718
Multiples of: 2000

8.8 A60 V280 mOhmsP - Channel 2 V- 55 C+ 150 C42 WSmd/SmtDPAKReelSi1 Channel- 10 V19 nCEnhancement  
SQS966ENW-T1_GE3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 11640
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AUD 0.6774
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6 A60 V36 mOhmsN - Channel 1.5 V- 55 C+ 175 C27.8 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi2 Channel10 V6.2 nCEnhancement  
SI7119DN-T1-GE3


MOSFET 200V 3.8A 52W 1.05ohm @ 10V
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Vishay 11640
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AUD 0.709
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   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
FDMC4435BZ


Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
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ON Semiconductor 11640
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AUD 0.7334
Multiples of: 3000

   P Channel               
TN2124K1-G


Transistor: N-MOSFET; unipolar; 240V; 0.14A; 360mW; SOT23-3
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Microchip 11640
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AUD 0.7345
Multiples of: 500

134 mA240 V15 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel4.5 V Enhancement  
IRF7317TRPBF


Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
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Infineon 11640
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AUD 0.7817
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6.6 A20 V29 mOhmsN And P - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel12 V18 nC   
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