MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTJS4151PT1G


MOSFET -20V -4.2A P-Channel
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ON Semiconductor 11640
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AUD 0.1435
Multiples of: 3000

3.3 A20 V205 mOhmsP - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtSC - 88ReelSi1 Channel- 1.8 V10 nCEnhancement  
BS170_D75Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 11640
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AUD 0.1571
Multiples of: 1

500 mA60 V1.2 Ohmsn - channel  - 55 C+ 150 C830 mWthrough holeTO - 92 - 3 K in KED LEADAmmo Packsi1 channel20 V enhancement  
SSM6J825R,LF


MOSFETs
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Toshiba 11640
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AUD 0.168
Multiples of: 1

           ReelSi      
SI1016CX-T1-GE3


MOSFET 20V .5/.35A PCH COMPLIMENTARY
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Vishay 11640
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AUD 0.1883
Multiples of: 3000

350 mA , 500 mA20 V396 mOhms , 756 mOhmsN And P - Channel 400 mV- 55 C+ 150 C220 mW , 220 mWSmd/SmtSC - 89 - 6 (SOT563 - 6)ReelSi2 Channel- 4.5 v , 4.5 V1.3 nC , 1.65 nCEnhancement Trenchfet
SMF4N65


650V 4A 33W 2.6O@10V,2A N Channel TO-220F-3 MOSFETs ROHS
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HUAKE 11640
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AUD 0.1945
Multiples of: 5

                   
NTJS3151PT1G


MOSFET 12V 3.3A P-Channel
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ON Semiconductor 11640
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AUD 0.197
Multiples of: 3000

3.3 A12 V133 mOhmsP - Channel  - 55 C+ 150 C625 mWSmd/SmtSC - 88ReelSi1 Channel12 V Enhancement  
FDS6930B-TP


SOP-8 MOSFETs ROHS
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TECH PUBLIC 11640
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AUD 0.2066
Multiples of: 5

                   
SI5457DC-T1-GE3


Vishay Semiconductors MOSFET 20V 6A 5.7W
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Vishay 11640
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AUD 0.2171
Multiples of: 3000

- 6 A- 20 V46 mOhmsP - Channel12 V- 1.4 V- 55 C+ 150 C5.7 WSmd/SmtCHIP - FET - 8ReelSi  25 nC  Trenchfet
AO6602


Trans MOSFET N/P-CH 30V 3.5A/2.7A 6-Pin TSOP T/R
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Alpha & Omega 11640
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AUD 0.2615
Multiples of: 3000

   N/P    1.15 WSurface Mount Tape And Reel    Enhancement  
STL3N10F7


STMicroelectronics MOSFET
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STMicroelectronics 11640
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AUD 0.2821
Multiples of: 3000

4 A100 V70 mOhmsN - Channel 4.5 V- 55 C+ 150 C2.4 WSmd/SmtPowerflat - 6Cut TapeSi1 Channel+/- 20 V7.8 nCEnhancement Stripfet
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