MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFBF20PBF-BE3


N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 11324
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AUD 2.0677
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1.7 A900 V8 OhmsN - Channel 4 V- 55 C+ 150 C54 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
NVJD5121NT2G


MOSFETs Dual N-Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6ohm
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ON Semiconductor 11288
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AUD 0.1729
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295 mA60 V1.6 OhmsN - Channel 2.5 V- 55 C+ 150 C250 mWSMD/SMTSC - 88 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V900 pCEnhancement  
MMFTP3008AK


MOSFETs
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Diotec 11252
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AUD 0.03
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NCE4009S


MOSFET N Trench 40V 9A (Tc) 2V @ 250uA 16 mΩ @ 8A,10V SOIC-8_150mil RoHS
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NCE Power 10155
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AUD 0.1133
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SI2306


SOT-23 MOSFETs ROHS
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TWGMC 6363
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AUD 0.0341
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DMN4040SK3-13


MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A
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Diodes Incorporated 4850
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AUD 0.2682
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6 A40 V30 mOhmsN - Channel 1.8 V- 55 C+ 150 C8.9 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V18.6 nCEnhancement  
ISC011N06LM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 600
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AUD 2.6194
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288 A60 V1.15 mOhmsN - Channel 2.3 V- 55 C+ 175 C188 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V63 nCEnhancement  
BSC019N04NS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 257
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AUD 0.8833
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29 A40 V1.9 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
BSR92PH6327XTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
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Infineon 56
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AUD 0.3093
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            Sipmos      
2N7002-G


MOSFET N Trench 60V 115mA 2.5V @ 250uA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 0
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AUD 0.0169
Multiples of: 50

                   
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