MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL50DN6F7


MOSFET Dual N-channel 60 V, 9 mOhm typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package
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STMicroelectronics 11640
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AUD 1.0912
Multiples of: 3000

57 A60 V11 mOhmsN - Channel 2 V- 55 C+ 175 C62.5 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi2 Channel20 V17 nCEnhancement  
STL42P6LLF6


MOSFET P-channel 60 V, 0.023 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 11640
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AUD 1.3425
Multiples of: 3000

42 A60 V34 mOhmsP - Channel 1 V- 55 C+ 175 C100 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi1 Channel4.5 V30 nCEnhancement Stripfet
2SK2464-TL-E


2SK2464-TL-E
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ON Semiconductor 11640
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AUD 1.9909
Multiples of: 1

                   
FQPF70N10


mosfet n trench 100v 35a 4v @ 250ua 23 m @ 17.5a,10v to-220f (to-220is) rohs
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ON Semiconductor 11640
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AUD 2.2143
Multiples of: 1

                   
FDMS037N08B


Fairchild Semiconductor MOSFET PT7 75V 3.7mohm PQFN56
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ON Semiconductor 11640
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AUD 2.2496
Multiples of: 3000

100 A75 V3.7 mOhmsN - Channel  - 55 C+ 150 C Smd/SmtPOWER - 56 - 8ReelSi     Powertrench
STB140NF75T4


MOSFET N-Ch 75 Volt 120 Amp
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STMicroelectronics 11640
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AUD 2.5815
Multiples of: 1000

120 A75 V7.5 mOhmsN - Channel  - 55 C+ 175 C310 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V Enhancement  
FDMS015N04B


MOSFET NCh40V100A,1.5m ohms PowerTrench MOSFET
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ON Semiconductor 11640
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AUD 2.6042
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100 A40 V1.13 mOhmsn - channel  - 55 C+ 150 C104 Wsmd/smtPOWER - 56Reelsi     powertrench
STH2N120K5-2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 11640
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AUD 3.629
Multiples of: 1000

           Cut Tape       
RTR030N05HZGTL


MOSFET NCH 45V 3A SMALL SIGNAL MOSFET
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ROHM 11636
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AUD 0.5335
Multiples of: 1

3 A45 V67 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V6.2 nCEnhancementAec - Q101 
IRFS3206TRRPBF


Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
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Infineon 6208
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AUD 2.3183
Multiples of: 800

210 A60 V2.4 mOhmsN - Channel 4 V- 55 C+ 175 C300 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V120 nC   
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