MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK9Y14-80E,115


MOSFET N-channel TrenchMOS logic level FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 11125
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AUD 0.6961
Multiples of: 1

62 A80 V12.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C147 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V28.9 nCEnhancement  
2N7002KD


60V 340mA 900mO@10V,500mA 150mW 2 N-Channel SOT-363 MOSFETs ROHS
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FUXINSEMI 10611
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AUD 0.0314
Multiples of: 20

                   
IRFR540ZTRLPBF


N-Channel 100 V 35A (Tc) 91W (Tc) Surface Mount D-Pak
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Infineon 10602
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AUD 0.8281
Multiples of: 1

35 A100 V28.5 mOhmsN - Channel 4 V- 55 C+ 175 C91 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V39 nCEnhancement  
IRFBE30LPBF


MOSFET N-Chan 800V 4.1 Amp
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Vishay 10591
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AUD 1.9329
Multiples of: 1

4.1 A800 V3 OhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 262 - 3TubeSi1 Channel- 20 V , 20 V78 nCEnhancement  
STD2N95K5


Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK
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STMicroelectronics 10575
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AUD 0.411
Multiples of: 1

2 A950 V4.2 OhmsN - Channel 4 V- 55 C+ 150 C45 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V10 nCEnhancement SuperMESH
SP2004KT7J


SOT-723 MOSFETs ROHS
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Siliup 10573
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AUD 0.011
Multiples of: 50

                   
PSMN011-30YLC,115


MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET
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Nexperia 10557
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AUD 0.2781
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37 A30 V11.6 mOhmsN - Channel 1.05 V- 55 C+ 175 C29 WSmd/SmtSO - 8ReelSi1 Channel10 V10.3 nCEnhancement  
TQM2N7002KCU RFG


MOSFETs 60V, 0.32A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 10552
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AUD 0.0597
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 2.5 V- 55 C+ 150 C316 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.7 nCEnhancementAEC - Q101 
RV2C014BCT2CL


MOSFET P-Chnl -20V Vdss -/+1.4A Id RASMID
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ROHM 10495
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AUD 0.0858
Multiples of: 5

- 1.4 A- 20 V700 mOhmsP - Channel - 1 V- 55 C+ 150 C600 mWSmd/SmtDFN1006 - 3ReelSi1 Channel+/- 8 V Enhancement  
IPD200N15N3GATMA1


Infineon Technologies MOSFET
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Infineon 10295
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AUD 1.5636
Multiples of: 1

50 A150 V20 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V23 nCEnhancement Optimos
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