MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDG6332C


MOSFET 20V N&P-Channel Power Trench
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 11640
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AUD 0.2885
Multiples of: 3000

700 mA20 V300 mOhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
SI3457CDV-T1-GE3


P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
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Vishay 11640
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AUD 0.3056
Multiples of: 3000

5.1 A30 V74 mOhmsP - Channel 1 V- 55 C+ 150 C3 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V10 nCEnhancement Trenchfet
SQJA37EP-T1_GE3


MOSFET -30V Vds -/+20V Vgs PowerPAK SO-8L
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Vishay 11640
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AUD 0.3556
Multiples of: 3000

30 A30 V9.2 mOhmsP - Channel 2.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancement  
DMP2039UFDE4-7


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K
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Diodes Incorporated 11640
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AUD 0.3617
Multiples of: 3000

7.3 A25 V70 mOhmsP - Channel 1 V- 55 C+ 150 C690 mWSmd/SmtX2 - DFN2020 - 6ReelSi1 Channel8 V28.2 nCEnhancement  
STN1NF20


MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II
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STMicroelectronics 11640
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AUD 0.3927
Multiples of: 4000

1 A200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel10 V5.7 nCEnhancement Stripfet
FDC6310P


MOSFET Dual P-Ch 2.5V Spec Power Trench
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ON Semiconductor 11640
Ships to you
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AUD 0.4002
Multiples of: 3000

2.2 A20 V125 mOhmsP - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel12 V Enhancement Powertrench
FDN5632N_F085


Fairchild Semiconductor MOSFET Trans MOS N-Ch 60V 1.7A
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ON Semiconductor 11640
Ships to you
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AUD 0.4042
Multiples of: 3000

1.6 A60 V98 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSSOT - 3ReelSi1 Channel20 V Enhancement Ultrafet
IRF8721TRPBF


MOSFET N Trench 30V 14A 2.35V @ 25uA 8.5 mΩ @ 14A,10V SOIC-8_150mil RoHS
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Infineon 11640
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AUD 0.4093
Multiples of: 4000

            Hexfet®      
TSM2318CX RFG


MOSFET 40V, 3.9A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 11640
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AUD 0.4413
Multiples of: 12000

3.9 A       1.25 W       Enhancement  
IRF9Z34NPBF


Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 11640
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AUD 0.2349
Multiples of: 1000

            Hexfet®      
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