MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM500P02DCQ RFG


MOSFET -20V -4.7A Dual P-Channel Power MOSFET
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Taiwan Semiconductor 11640
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AUD 0.8615
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SI7157DP-T1-GE3


MOSFET -20V .0016ohm@-10V -60A P-Ch
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Vishay 11640
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AUD 0.9007
Multiples of: 3000

- 60 A- 20 V1.25 mOhmsP - Channel12 V- 500 mV to - 1.4 V- 55 C+ 150 C104 WSmd/SmtSO - 8Reel   202.5 nC  Trenchfet
STL50DN6F7


MOSFET Dual N-channel 60 V, 9 mOhm typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package
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STMicroelectronics 11640
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AUD 1.0912
Multiples of: 3000

57 A60 V11 mOhmsN - Channel 2 V- 55 C+ 175 C62.5 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi2 Channel20 V17 nCEnhancement  
IRFH5053TRPBF


N-Channel 100 V 9.3A (Ta), 46A (Tc) 3.1W (Ta), 8.3W (Tc) Surface Mount PQFN (5x6) Single Die
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Infineon 11640
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AUD 1.5554
Multiples of: 4000

46 A100 V18 mOhmsN - Channel20 V - 55 C+ 175 C3.1 WSmd/SmtPQFN - 8Reel   24 nCEnhancement  
SI7148DP-T1-E3


MOSFET 75V Vds 20V Vgs PowerPAK SO-8
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Vishay 11640
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AUD 1.8004
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet
2SK2464-TL-E


2SK2464-TL-E
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ON Semiconductor 11640
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AUD 1.9909
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FDMS015N04B


MOSFET NCh40V100A,1.5m ohms PowerTrench MOSFET
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ON Semiconductor 11640
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AUD 2.4487
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100 A40 V1.13 mOhmsn - channel  - 55 C+ 150 C104 Wsmd/smtPOWER - 56Reelsi     powertrench
STH2N120K5-2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 11640
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AUD 4.0397
Multiples of: 1000

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2N7002VA


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 11638
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AUD 0.4564
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280 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563F - 6ReelSi2 Channel20 V Enhancement  
RTR030N05HZGTL


MOSFET NCH 45V 3A SMALL SIGNAL MOSFET
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ROHM 11636
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AUD 0.5335
Multiples of: 1

3 A45 V67 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V6.2 nCEnhancementAec - Q101 
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