MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC1029UFDB-7


MOSFET 20V Comp Pair Enh 8Vgs 914pF 10.5nC
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Diodes Incorporated 11640
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AUD 0.5058
Multiples of: 1

         Smd/SmtDFN1612 - 6Cut TapeSi      
SIA456DJ-T1-GE3


MOSFET 200V 2.6A 19W 1.38ohm @ 4.5V
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Vishay 11640
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AUD 0.5298
Multiples of: 3000

2.6 A200 V1.38 OhmsN - Channel 600 mV- 55 C+ 150 C19 WSmd/SmtSC - 70ReelSi1 Channel4.5 V5 nCEnhancement Trenchfet, Powerpak
PJD16P06A_L2_00001


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit 11640
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AUD 0.6113
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IPS70R950CEAKMA1


MOSFET CONSUMER
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Infineon 11640
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AUD 0.649
Multiples of: 1

 700 V        TO - 251 - 3Tubesi     coolmos
IRLR3105TRPBF


Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
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Infineon 11640
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AUD 0.681
Multiples of: 1

25 A55 V43 mOhmsN - Channel 3 V- 55 C+ 175 C57 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
SQS966ENW-T1_GE3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 11640
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AUD 0.6989
Multiples of: 1

6 A60 V36 mOhmsN - Channel 1.5 V- 55 C+ 175 C27.8 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi2 Channel10 V6.2 nCEnhancement  
NDT014L


MOSFET N-Ch LL FET Enhancement Mode
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ON Semiconductor 11640
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AUD 0.7054
Multiples of: 4000

2.8 A60 V170 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
STL30N10F7


MOSFET N-Ch 100V 0.027 Ohm typ. 8A STripFET VII
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STMicroelectronics 11640
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AUD 0.7683
Multiples of: 3000

8 A100 V27 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C4.8 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V14 nC  Stripfet
TSM500P02DCQ RFG


MOSFET -20V -4.7A Dual P-Channel Power MOSFET
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Taiwan Semiconductor 11640
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AUD 0.8615
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           Cut Tape       
SI7972DP-T1-GE3


MOSFET Dual N-Ch 30V Vds 7.1nC Qg Typ
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Vishay 11640
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AUD 1.0435
Multiples of: 3000

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