MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRLR3636TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
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Infineon 11425
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AUD 2.0743
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99 A60 V8.3 mOhmsn - channel    143 Wsmd/smtDPAK - 3Reelsi1 channel16 V33 nC aec - q101 
SSM6K818R,LF


MOSFETs TSOP6F S-MOS(LF)
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Toshiba 11424
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AUD 0.3803
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           ReelSi      
NTMFD5C680NLT1G


MOSFET T6 60V LL SO8FL DUAL
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ON Semiconductor 11410
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AUD 0.3997
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26 A60 V28 mOhmsN - Channel 1.2 V- 55 C+ 175 C19 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V5 nCEnhancement  
IAUC60N04S6L030HATMA1


Mosfet Array 2 N-Channel (Half Bridge) 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
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Infineon 11410
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AUD 1.1173
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119 A40 V3 mOhmsN - Channel 2 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 16 V , + 16 V27 nCEnhancement OptiMOS
AO3407


30V 4.3A 52mΩ@10V,4.1A 350mW 2.1V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 11310
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AUD 0.0292
Multiples of: 20

                   
STD2N95K5


Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK
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STMicroelectronics 11304
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AUD 0.4798
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2 A950 V4.2 OhmsN - Channel 4 V- 55 C+ 150 C45 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V10 nCEnhancement SuperMESH
IRF740APBF


N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 10394
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AUD 1.1903
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10 A400 V550 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V36 nCEnhancement  
SI2301CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 9738
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AUD 0.0625
Multiples of: 10

                   
Hot IRL510PBF


MOSFET RECOMMENDED ALT 844-IRL510PBF
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Vishay 4463
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AUD 0.4454
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5.6 A100 V540 mOhmsN - Channel 1 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel5 V6.1 nCEnhancement  
STP24NF10


Transistor: N-MOSFET; unipolar; 100V; 18A; 85W; TO220-3
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STMicroelectronics 3299
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AUD 0.5317
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