MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RV3CA01ZPT2CL


MOSFET PCH -20V -100MA SS
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ROHM 11240
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AUD 0.2917
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100 mA20 V3.8 OhmsP - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtDFN0604 - 3Cut TapeSi1 Channel10 V-Enhancement  
TM80N06NF


60V 80A 7.5m PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 11237
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AUD 0.2671
Multiples of: 5

                   
DMN2004WK


SOT-323 MOSFETs ROHS
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TECH PUBLIC 11219
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AUD 0.0434
Multiples of: 10

                   
BSZ019N03LS


MOSFET N-Channel 30V MOSFET
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Infineon 11213
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AUD 0.9271
Multiples of: 1

40 A30 V1.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel10 V44 nCEnhancement Optimos
IRFR1N60APBF-BE3


N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11209
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AUD 1.2
Multiples of: 1

1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 30 V , + 30 V14 nCEnhancement  
FDD8870


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 11205
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AUD 1.256
Multiples of: 1

160 A30 V3.9 mOhmsN - Channel  - 55 C+ 175 C160 WSmd/SmtTO - 252AAReelSi1 Channel20 V Enhancement Powertrench
SI2302S


SOT-23 MOSFETs ROHS
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GOODWORK 11203
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AUD 0.0081
Multiples of: 50

                   
SI1400DL-T1-GE3


Vishay Semiconductors MOSFET 20V N-CH (DS) 2.5V Rated Trench
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Vishay 11203
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AUD 0.2853
Multiples of: 1

1.6 A20 V150 mOhmsn - channel  - 55 C+ 150 C568 mWsmd/smtSOT - 363 - 6Reelsi1 channel12 V   trenchfet
SI3499DV-T1-BE3


MOSFET P-CHANNEL 1.5-V (G-S)
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Vishay 11201
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AUD 0.85
Multiples of: 1

7 A8 V23 mOhmsP - Channel 750 mV- 55 C+ 150 C1.1 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 5 V , + 5 V28 nCEnhancement  
DMC31D5UDJ-7


MOSFET 30V N & P Enh FET Low RDSon 22.2pF
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Diodes Incorporated 11181
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AUD 0.213
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220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN And P - Channel12 V1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
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