MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP4065S-7


MOSFET 40V P-Ch Enh Mode 20Vgs 587pF 12.2nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 17493
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AUD 0.1224
Multiples of: 5

3.4 A40 V80 mOhmsP - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V12.2 nCEnhancement  
BSC0805LSATMA1


100V 79A 83W 7mO@40A,10V null TDSON-8 MOSFETs ROHS
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Infineon 10818
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AUD 1.6186
Multiples of: 1

           Cut Tape       
BSZ097N10NS5


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 10776
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AUD 1.0393
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtPG - TSDSON - 8ReelSi1 Channel10 V22 nCEnhancement Optimos
2N7002W


Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT323
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Luguang 10770
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AUD 0.0606
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IRLML6344TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 10767
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AUD 0.0308
Multiples of: 20

                   
BSZ900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
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Infineon 10723
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AUD 0.8784
Multiples of: 1

            Optimos 3      
BSS123


100V 150mA 3.5Ω@10V,120mA 250mW N Channel SOT-23 MOSFETs ROHS
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SLKORMICRO 9932
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AUD 0.023
Multiples of: 20

                   
BSS138


MOSFET N Trench 50V 220mA 1.6V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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AnBon 7934
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AUD 0.023
Multiples of: 20

                   
DMG2305UX


SOT-23 MOSFETs ROHS
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TECH PUBLIC 6523
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AUD 0.079
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SIR186LDP-T1-RE3


MOSFET N-CHANNEL 60-V (D-S)
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Vishay 6330
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AUD 0.6773
Multiples of: 1

80.3 A60 V4.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C57 WSMD/SMTPOWERPAK SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V31.5 nCEnhancement TrenchFET
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