MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2305U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 11213
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AUD 0.0433
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4.2 A20 V60 mOhmsP - Channel 500 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7.6 nCEnhancement  
CPC3981ZTR


MOSFETs N-CH DEP MOSFET 800V 45 Oh SOT-223-2L TR
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IXYS 11179
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AUD 1.3183
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100 mA800 V32.5 OhmsN - Channel  - 55 C+ 150 C2.25 WSMD/SMTSOT - 223 - 2Reel , Cut TapeSi1 Channel- 15 V , + 15 V Depletion  
SI3457CDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay 11167
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AUD 0.4865
Multiples of: 1

5.1 A20 V74 mOhmsP - Channel 3 V- 55 C+ 150 C3 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V15 nCEnhancement  
DMTH4007SPD-13


MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A
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Diodes Incorporated 11165
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AUD 0.8259
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100 A40 V4.9 mOhmsN - Channel 2 V- 55 C+ 175 C2.8 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 V41.9 nCEnhancement  
DMN2710UV-7


MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 3K
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Diodes Incorporated 11161
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AUD 0.0559
Multiples of: 1

           Reel , Cut TapeSi      
SI3433CDV-T1-E3


MOSFET 20V 6.0A 3.3W 38mohm @ 4.5V
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Vishay 11147
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AUD 0.241
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   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
FDT86106LZ


N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
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ON Semiconductor 11146
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AUD 0.9167
Multiples of: 1

3.2 A100 V108 mOhmsn - channel   + 150 C2.2 Wsmd/smtSOT - 223Reelsi1 channel 4.3 nC  powertrench
BSL211SPH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
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Infineon 11142
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AUD 0.3021
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            Optimos P      
NCE3080K


MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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NCE Power 11140
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AUD 0.1039
Multiples of: 5

                   
AON6500


MOSFET N CH 30V 71A DFN5X6
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Alpha & Omega 9387
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AUD 0.8949
Multiples of: 1

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